Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs capable of causing Vf drift as low as < 0.1 cm-2. This low BPD material further demonstrates Cree's long-standing commitment to continuous improvement and investment in SiC materials technology.
"Bipolar devices in SiC have long been held back by forward voltage degradation caused by the presence of BPDs," said John Palmour, CTO, Cree Power & RF. "This Low BPD material enables very high voltage bipolar devices such as IGBTs (insulated-gate bipolar transistors) and GTOs (gate turn-off thyristor) to have improved stability over time. This recent development helps remove roadblocks to commercialization of these extremely high power devices.
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications.
