Cree’s latest SiC 1200V mosfets have been designed and fabricated to offer lower cost than previous generation mosfets.
The product range has been extended to include a much larger 25mOhm die aimed at the higher power module market for power levels above 30kW.
The 80mOhm device is intended as a lower cost, higher performance upgrade to the first generation mosfet.
High power modules
Die are available with ratings of 25mOhm, intended as a 50A building block for high power modules, and 80mOhm.
The 80mOhm mosfet in a TO-247 package is intended as a higher performance, lower cost replacement for Cree’s first-generation CMF20120D.
Packaged parts are available immediately from Digi-Key, Mouser and Farnell.
Source:
http://www.electronicsweekly.com/Articles/2013/03/25/55826/cree-aims-sic-mosfets-at-lower-cost-designs.htm
