Bridgelux and Toshiba announce 8-inch GaN-on-silicon LEDs Siu Han, Taipei; Alex Wolfgram, DIGITIMES [Wednesday 30 May 2012] Bridgelux and Toshiba recently announced that the two companies have achieved 8-inch GaN-on-silicon LED chips that has an optical power of 614 mW with a voltage of 3.1V when driven at 350 mA and is 1.1x1.1 mm in size.
LED lighting is typically made with a semiconductor - gallium nitride - on a layer of sapphire. However, the two companies have developed a process for depositing gallium nitride on silicon, which they believe will lead to much lower costs by leveraging the existing semiconductor industry infrastructure.
Toshiba has also made an equity investment in Bridgelux with the intent to jointly pursue an innovative technology in the solid state lighting (SSL) space. This investment will further advance both companies' efforts in the SSL industry, with the view to boost Bridgelux's GaN-on-Silicon LED chip technology development efforts based on Toshiba's advanced silicon process and manufacturing technology development efforts, according to Bridgelux.
Bridgelux and Toshiba will also further accelerate their development efforts for LED chips, which have seen increasing demand for LCD panels and lightening systems worldwide, added Bridgelux.
Bridgelux predicts that within two years it can produce LED light sources that can generate 1,000 lumens for US$0.50. To the consumer, that translates to a bulb with the brightness of 75-watt incandescent for roughly US$5.
