University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
Taiwan-based researchers have been working to reduce nitride semiconductor high-electron-mobility transistor(HEMT)costs by developing copper interconnect structures compatible with production processes on silicon substrates[Yueh-Chin Lin et ...
Tags: HEMT, Breakdown Voltages, Copper, Gold
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN
5 June 2012 Kyma demos K-Slice diamond wire technology on sapphire boules Picture:First slices from a 2"LED quality sapphire boule using Kyma's K-Slice super-abrasive diamond wire technology in a commercial multi-wire saw ...
Tags: Kyma Technologies Inc., K-Slice diamond wire technology
Researchers in Nanjing,China have reported the first fabrication and characterization at high temperature of high-performance solar-blind photodetectors(PDs)based on an aluminium gallium nitride(AlGaN)absorption layer and planar ...
Tags: High-Temperature, PD, MSM, Solar
Kyma's AlN templates are manufactured using its patented plasma vapor deposition of nanocolumns(PVDNC)technology,which provides GaN LED manufacturers with throughput,cost,and performance benefits.Light emitting diode(LED)manufacturers ...
Kyma Technologies Inc of Raleigh,NC,USA,has made a breakthrough on a 10-inch diameter AlN-on-sapphire template using its patented plasma vapor deposition of nanocolumns(PVDNC)technology. The PVDNC AlN templates are chosen by manufacturers ...
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminium nitride(AlN)and aluminium gallium nitride(AlGaN)materials and related products and services,says that it has demonstrated a 10-inch ...
Tags: 10"AlN-on-sapphire template, GaN, PVDNC, GaN LED
Researchers in France and Switzerland have used nitride semiconductor quantum cascade(QC)structures to detect short-wavelength infrared light[S.Sakr et al,Appl.Phys.Lett.,vol100,p181103,2012].The team was based variously at University of ...
Tags: Quantum cascade detectors, Short-wavelength IR, QC structures
Recently, a team of researchers from North Carolina and Japan have jointly made a breakthrough on UV disinfection using LED technology. As we know, aluminum nitride (AlN) is used in LEDs, based on its strengths which can handle a lot of ...
Tags: Market View, uv, led
Plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK says that its Sigma fxP physical vapor deposition (PVD) system had been selected by a Chinese foundry dedicated to producing RF ...
Tags: SPTS PVD GaAs substrates
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
A Kansas company has received $2.5 million in series A funding to commercialize its process to grow high-quality, low-cost aluminum nitride substrates. Nitride Solutions Inc., a Wichita, Kansas-based developer of aluminum-nitride (AlN) ...
Tags: aln, raw material
A Kansas company has received $2.5 million in series A funding to commercialize its process to grow high-quality, low-cost aluminum nitride substrates. Nitride Solutions Inc., a Wichita, Kansas-based developer of aluminum-nitride (AlN) ...
Tags: Market View, raw material, aln