At the PCIM (Power Conversion Intelligent Motion) Asia 2014 conference in Shanghai World Expo Exhibition and Convention Center, China (17-19 June), Michael de Rooij (executive director, Application Engineering) from Efficient Power ...
Tags: Electrical, Electronics
ABB of Zurich, Switzerland, which focuses on electric power engineering and industrial automation, has granted 5m Swiss Francs to the ETH Zurich Foundation to support the development of high-performance power semiconductors, with the aim of ...
Tags: Power electronics SiC, ABB, Electrical, Electronics
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has introduced its new silicon carbide (SiC) MOSFET product family with new 1200V solutions. The new SiC ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced DrGaNPLUS evaluation ...
Tags: Half-Bridge Converter, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting in booth 9-523 at PCIM (Power Conversion Intelligent ...
Tags: GaN Systems, High-Current Devices
Tokyo-based Mitsubishi Electric Corp has started shipping samples of new 1200V hybrid silicon carbide (SiC) power semiconductor modules for high-frequency switching applications. Featuring SiC diodes, the modules achieve high efficiency, ...
Tags: Mitsubishi Electric, SiC power modules, High-Frequency Switching
Cree Inc of Durham, NC, USA claims to have shattered the on-resistance barrier of traditional 1200V MOSFET technology by introducing the first commercially available silicon carbide (SiC) 1200V MOSFET with an RDS(ON) of 25mΩ in an ...
Tags: Cree SiC MOSFET, Electrical, Electronics
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has obtained a sole worldwide license to Furukawa Electric Co Ltd's extensive gallium nitride (GaN) power device ...
Tags: Transphorm GaN-on-Si GaN HEMT, power conversion devices, power modules
At the PCIM (Power Conversion Intelligent Motion) Europe 2014 conference in Nuremberg, Germany (20-22 May), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power ...
Tags: EPC E-mode GaN FETs GaN-on-silicon, Electrical, Electronics
Artesyn Embedded Technologies of Tempe, AZ, USA (formerly Emerson Network Power’s Embedded Computing & Power business), which designs and manufactures power conversion and embedded computing solutions for communications, computing, ...
Tags: GaN Power, Amplifier Systems
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA is to showcase its latest power management solutions at PCIM (Power Conversion Intelligent Motion) Europe 2014 in the Nuremberg Exhibition Center, ...
Tags: International Rectifier GaN-on-silicon, semiconductor, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has created and posted on line an 11-part ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Julian Styles, its director of business development USA, ...
Tags: GaN Systems Power electronics, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9016 half-bridge ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics