Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems for communications, defense & security, aerospace and industrial markets) has entered into a definitive ...
Tags: Microsemi, Vitesse, Electronics
Cree Inc of Durham, NC, USA has introduced a 25W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) for 6–12GHz performance. Leveraging the inherent benefits of GaN technology, the new MMIC enables extremely wide ...
Tags: integrated circuit, GaN technology
Panasonic Corp of Osaka, Japan and Osaka-based Sansha Electric Manufacturing Co Ltd have developed a compact silicon carbide (SiC) power module, together with highly efficient operation of power switching systems. The module is said to have ...
Tags: Panasonic, silicon carbide
ROHM of Kyoto, Japan says that its SCT2080KE silicon carbide (SiC) MOSFET has been adopted in the new SiC-Pulser Series of ultra-high-voltage pulse generators launched by Japan's Fukushima SiC Applied Engineering Inc. Picture: ...
Tags: Pulse Generators, Generators
After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...
Deposition equipment maker Aixtron SE of Aachen, Germany says that Taiwanese group Episil Semiconductor Wafer Inc has put into operation an AIX G5 WW (Warm-Wall) chemical vapor deposition (CVD) reactor for silicon carbide (SiC) epitaxy. ...
Tags: silicon components, Electronics
To address the needs of small-cell designers, Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the CDPA35045 asymmetric Doherty power amplifier (PA) reference design ...
On February 4, 2014, the U.S. Environmental Protection Agency will hold a public meeting to discuss how a new scientific study about a previously unknown contaminant relates to the ongoing cleanup at the Reich Farm Superfund site in Toms ...
Tags: groundwater treatment system, drinking water, Agriculture
Using a Camry hybrid prototype and a fuel cell bus, Tokyo-based Toyota Motor Corporation aims this year to conduct tests on the streets of Japan that will evaluate the performance of silicon carbide (SiC) power semiconductors, which could ...
For fiscal second-quarter 2015 (ended 28 December 2014), Cree Inc of Durham, NC, USA has reported revenue of $413.2m, down 3.4% on $427.7m last quarter but similar to $415.1m a year ago and in the upper half of the target range of $400-420m ...
Tags: LED Demand, LED Lighting Offsets, Electrical
Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its Technologies Group experienced more than 20% growth in 2014, marking its third consecutive year of high growth. ...
Tags: synthetic diamond solutions, emerging markets, Electrical
Since gallium nitride (GaN) materials can create much more efficient devices for electric power conversion in devices from cell phone chargers to hybrid electric vehicles, the market for GaN discrete components will grow to $1.1bn in 2024, ...
Epiluvac AB of Lund, Sweden has received an order for its EPI-1000X silicon carbide (SiC) reactor from a “leading European research center”. Installation and commissioning of the system will be completed during first-quarter ...
Tags: gas flows, heating system, Electrical
Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, recently extended its family of 50V discrete GaN high-electron-mobility transistor (HEMT) die with the release of three new ...
Tags: electron drift velocity, gallium arsenide technologies, Electrical
Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) power devices, has introduced a new MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable ...
Tags: configurable half-bridge circuit, MOSFET design, Electrical