KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
Although wireless backhaul radio quantities will grow slowly to about 1.7 million units in 2019, price erosion will cause the corresponding RF component revenue in the segment to decline at a compound average growth rate (CAGR) of minus 2% ...
Tags: RF component, Electronics
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA, a provider of RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of hybrid gallium nitride (GaN)/gallium arsenide (GaAs) power amplifiers ...
Tags: Power Amplifier, Qorvo
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has expanded its portfolio of RF switches with a suite of analog control ICs for a variety of Internet of Things applications including ...
Tags: Skyworks, switching technologies
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, US is shipping production volumes of its ACA1216 surface-mount line amplifier to Applied Optoelectronics Inc's China subsidiary Global Technology, ...
Tags: Anadigics, CATV Infrastructure
For first-quarter 2015, AXT Inc of Fremont, CA, USA, which makes gallium arsenide, indium phosphide and germanium substrates and raw materials, has reported revenue of $20.1m, up 2.5% on $19.6m last quarter and 4% on $19.3m a year ago. ...
Tags: gallium arsenide, indium phosphide
Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...
China-based Hanergy Thin Film Power Group Ltd and the Huangpi District People's Government in Wuhan City have entered into an investment cooperation agreement to construct a gallium arsenide (GaAs) thin-film solar cell R&D and manufacturing ...
Tags: Solar Cells, gallium arsenide
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...
Tags: TPV devices, lattice mismatch, Electronics
k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has reported revenue for its patented kSA BandiT wafer and film temperature monitoring ...
Tags: k-Space, Electronic Materials, Electrical
ClassOne Technology of Kalispell, MT, USA, which manufactures wet-chemical processing equipment (especially for cost-conscious emerging markets and users of smaller substrates), has delivered a fully automated Solstice S8 electroplating ...
Tags: AWSC, MMIC, Electrical
Sol Voltaics AB of Lund, Sweden, which provides nanomaterial technology for enhancing solar panels and other products, has demonstrated a 1-sun photovoltaic (PV) solar energy conversion efficiency of 15.3% using a gallium arsenide (GaAs) ...
Tags: GaAs, PV, Electronics
SAGE SatCom of San Diego, CA, USA (part of telecoms solutions provider REMEC Broadband Wireless), which provides compact Ka-band block up-converter (BUC) and transceiver solutions, is now shipping its high-power 20 watt linear Ka-band BUC ...
Tags: GaN, M&C, Electronics
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems for communications, defense & security, aerospace and industrial markets) has entered into a definitive ...
Tags: Microsemi, Vitesse, Electronics