At the 11th China International Forum on Solid State Lighting (SSL CHINA 2014) in Guangzhou (6-8 November), deposition equipment maker Aixtron SE of Aachen, Germany has launched its next-generation metal-organic chemical vapor deposition ...
Researchers based in Singapore and Turkey have been developing a hole accelerator structure with a view to improving the performance of indium gallium nitride (InGaN) semiconductor light-emitting diodes (LEDs) [Zi-Hui Zhang et al, Appl. ...
Tags: Nitride LEDs, InGaN
For third-quarter 2014, deposition equipment maker Aixtron SE of Aachen, Germany has reported revenue of €45.6m, down just 1.3% on €46.2m both last quarter and a year ago. The utilization rates of most tier-one LED chip makers ...
Tags: Aixtron, deposition equipment, LED maker
North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that, in third-quarter 2014 China’s Suzhou Nanojoin Photonics Co Ltd ordered multiple TurboDisc MaxBright M metal-organic chemical vapor ...
Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure
Currently, most flexible electronic and optoelectronic devices are fabricated using organic materials. However, for these devices inorganic compound semiconductors such as gallium nitride (GaN) can provide advantages over organic materials ...
Tags: LEDs, LED displays, Electrical, Electronics
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has launched the TurboDisc EPIK700 gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which combines what are reckoned ...
Tags: Veeco MOCVD GaN HB-LEDs
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
Deposition equipment maker Aixtron SE of Aachen, Germany says that Mitsubishi Electric Corp (MELCO) of Tokyo, Japan has begun operations with an AIX 2800G4 HT Planetary Reactor system. The 11x4”-wafer configuration metal-organic ...
Tags: Mitsubishi, GaN-on-Si, power amplifiers
Fukuda Crystal Laboratory Co Ltd has grown ScAlMgO4 scandium aluminium magnesium oxide (SCAM) crystal with a diameter of 50mm (2 inches) that could be used as a substrate for gallium nitride (GaN)-based light-emitting devices such as blue ...
Tags: Fukuda Crystal Lab, a diameter, Electrical
University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...
For second-quarter 2014, deposition equipment maker Aixtron SE of Aachen, Germany has reported revenue of €46.2m, rebounding by 5% from €43.9m last quarter (which had been down 14% on the previous quarter) and up 2% on €45.3m ...
Tags: Aixtron, MOCVD, Electronics