National Formosa University in Taiwan has developed a liquid-phase deposition (LPD) process of textured zinc oxide on III-V semiconductor to provide improved absorption of multi-junction solar cells [Po-Hsun Lei et al, J. Phys. D: Appl. ...
Tags: ZnO, germanium solar cells, solar cells
Soraa announced yesterday the next generation of its high external quantum efficiency GaN on GaN LEDs. As described in Appl. Phys. Lett. 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia ...
Tags: Soraa, LED outperforms, GaN LEDs, LED laboratory
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
Researchers in Japan and Switzerland have used a laser treatment of sapphire substrates to increase the thickness of gallium nitride (GaN) layers grown by hydride vapor phase epitaxy (HVPE) to around 200μm [Hideo Aida et al, Appl. Phys. ...
Researchers in Spain have grown high-indium-content indium gallium nitride (InGaN) directly on silicon (Si) substrates [Praveen Kumar et al, Appl. Phys. Express, vol6, p035501, 2013]. The work was carried out at Universidad ...
Tags: InGaN, silicon, Optoelectronics, Microtechnology
Soraa has developed the next generation of its high external quantum efficiency GaN on GaN LEDs, which outperform the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond as described in ...
Tags: Soraa, GaN on GaN LEDs, LED laboratory
As described in Applied Physics Letters 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond (J. Phys. D: Appl. Phys. 43, 354002). ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has announced the next generation of its high external quantum efficiency ...
Tags: Soraa GaN-on-GaN, LED, USA
Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...
Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED
NTT Basic Research Laboratories in Japan has used hexagonal boron nitride (h-BN) layers to release nitride semiconductor light-emitting diodes (LEDs) from sapphire and transfer them to commercially available adhesive tape [Toshiki Makimoto ...
Tags: LED
Taiwan’s National Chung Hsing University has used nitride semiconductor growth on gallium nitride nanocolumns and nanoporosity achieved with photoelectrochemical etching to boost the light output power of light-emitting diodes (LEDs) ...
Tags: LEDs, Air-Channels, Nanoporous Structure
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Sophia University in Tokyo, Japan, has used nanocolumns of nitride semiconductor to produce different emission color LEDs in a single growth process for what is claimed to be the first time [Katsumi Kishino et al, Appl. Phys. Express, vol6, ...
Tags: Sophia University, LEDs, Sapphire substrates, LEd lighting
Seoul National University and Ritsumeikan University in Korea have developed a new technique for growing higher-quality gallium nitride (GaN) layers at temperatures as low as 500°C [In-Su Shin et al, Appl. Phys. Express, vol5, p125503, ...
Tags: Lights, Instruments, Meters