Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED
LED chips are a core component in the LED industry. There are currently many domestic and international LED chip manufacturers in China, but there currently are no categorization standards, according to a report by Chinese-language ...
Tags: LED Industry, LED Chips
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has announced the availability and full technical support for 17 ...
Tags: Electrical, Electronics
Anvil Semiconductors Ltd of Coventry, UK has been awarded a grant by the UK's Technology Strategy Board (TSB) to evaluate the feasibility of using its unique stress relief technology to enable the production of low-cost, high-brightness ...
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA is to showcase its latest power management solutions at PCIM (Power Conversion Intelligent Motion) Europe 2014 in the Nuremberg Exhibition Center, ...
Tags: International Rectifier GaN-on-silicon, semiconductor, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has created and posted on line an 11-part ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Julian Styles, its director of business development USA, ...
Tags: GaN Systems Power electronics, Electrical, Electronics
GaN-on-Si technology has emerged naturally as an alternative to GaN-on-sapphire — the mainstream technology for LED applications. But today, despite potential cost benefits, the mass adoption of GaN-on-Si technology for LED ...
Tags: GaN-on-Si, Electrical, Electronics
Deposition equipment maker Aixtron SE of Aachen, Germany says that Jiangsu Trifortune Electronic Technology Co Ltd of Jintan City, China has ordered an AIX G5 HT metal-organic chemical vapor deposition (MOCVD) system to develop gallium ...
Tags: Aixtron MOCVD, LED
Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED
Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
RF Micro Devices Inc of Greensboro, NC, USA says that its gallium nitride (GaN) amplifier family for the new DOCSIS 3.1 CATV networking standard has won the CableFAX Tech Award for Green Technology, which recognizes technology that helps ...
Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...
Tags: Electrical, Electronics
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that its Spatium technology achieves unprecedented levels of Ka-band solid-state power, bandwidth and efficiency, providing greater broadband capacity and ...
Tags: Electrical, Electronics
In-situ metrology system maker LayTec AG of Berlin, Germany notes that it is known that some properties of gallium nitride (GaN)-based light-emitting quantum wells (QW) can be improved by using a-plane III-nitrides. However, during ...
Tags: LayTec Metrology, AIN Interlayers