Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
Hardide Coatings has invested a six-figure sum in its UK manufacturing facility – increasing its installed capacity by nearly 50 percent to deal with growing demand for its range of nanostructured tungsten carbide coatings. The ...
Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, says that EDN (Electronic Design News) has named its C2M0025120D 1200V, 25mΩ SiC MOSFET as one of the ‘Hot 100 ...
Tags: silicon carbide, gallium nitride, Electrical
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has introduced what are claimed to be the industry’s highest thermal and wideband performance GaN device with a 125W continuous wave (CW) gallium nitride on ...
Tags: Power Transistor, Electrical
Raytheon UK’s semiconductor business unit in Glenrothes, Scotland, UK has been selected by a “leading automotive manufacturer” to develop a silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistor ...
STMicroelectronics of Geneva, Switzerland has unveiled new automotive-qualified silicon carbide (SiC) diodes for on-board battery chargers (OBCs) in electric vehicles such as plug-in hybrids (PHEVs) that demand high power-handing capability ...
Tags: on-Board Battery Chargers, 650V SiC Diodes, Electrical
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...
Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical
PV module maker Win Win Precision Technology has cooperated with a Japan-based PV vendor to co-market HeatCap, patented PV modules developed by Win Win Precision, in the Japan rooftop PV system market, according to PV industry sources. ...
Tags: patented PV modules, Lights
Tokyo-based Mitsubishi Electric Corp has launched its large hybrid silicon carbide (SiC) transfer-mold dual in-line package intelligent power module (DIPIPM), which incorporates a SiC Schottky barrier diode (SBD) and seventh-generation IGBT ...
Tags: hybrid silicon carbide, dual in-line package intelligent power module
The market for discrete power electronics components – used to convert and manage electricity in devices ranging from mobile phones to pumps and motors – will grow by 77% from $13bn today to $23bn in 2024, according to the ...
Deposition equipment maker Aixtron SE of Aachen, Germany says that Japanese manufacturer Showa Denko has qualified its most recent system for manufacturing silicon carbide (SiC) epitaxial wafers. The new AIX G5 WW (Warm-Wall) chemical vapor ...
For its fiscal first-quarter 2015 (ended 28 September 2014), Cree Inc of Durham, NC, USA has reported revenue of $427.7m, up 9% on $391m a year ago but down 2% on $436.3m last quarter (and below the $440-465m forecasted in mid-August). ...
Cree Inc of Durham, NC, USA has introduced its SC5 Technology Platform, targeted at powering the next generation of lighting with the introduction of the firm’s new Extreme High Power (XHP) LEDs. The new class of LEDs can reduce ...
Tags: Cree LED, High Power LEDs