Spending on RF high-power semiconductors for the wireless infrastructure markets has flattened out this year, despite the fact that the overall market hit well over $1.5bn in 2015, according to ABI Research's report 'RF Power ...
Tags: High-Power Semiconductor, GaN
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications) says that its infrastructure solutions have supported more than twenty 5G ...
Tags: Qorvo, Infrastructure Providers
Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...
Tags: Peregrine, GaN FET Driver
The pan-European REFERENCE research project - created to leverage disruptive radio-frequency silicon-on-insulator (RF-SOI) technology in developing industrial solutions for the performance, cost and integration needs of RF front-end modules ...
Tags: RF-SOI, ECSEL, 4G+communications
Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added to its BroadRange family of wideband gallium arsenide (GaAs) MMIC distributed amplifiers with the 2-20GHz CMD238, suitable for military, space and ...
Tags: communications systems, Amplifier
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) says that Huawei's newest flagship P9 and P9 Plus smartphones are being enabled by a broad suite of its devices, ranging from highly ...
ICT-STREAMS, a part of the European Union Horizon 2020 program, is a new three-year project launched on 1 February (followed by a kick-off meeting at the Aristotle University of Thessaloniki, Greece on 24-25 February) with the goal of ...
Tags: III-Vs-on-Si, silicon photonics
The RF power semiconductor market will grow from $10.57bn in 2015 to $31.26bn in 2022, rising at a compound annual growth rate (CAGR) of 15.4% between 2016 and 2022, forecasts the firm MarketsandMarkets. According to the report 'RF Power ...
Tags: Marketsandmarkets, CAGR
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
At the International Symposium on 3D Power Electronics, Integration and Manufacturing Symposium in Raleigh, NC, USA (13-15 June), power management component supplier Sarda Technologies of Durham, NC, USA announced a collaboration to ...
Emcore Corp of Alhambra, CA, USA - which designs and manufactures indium phosphide (InP)-based optical chips, components, subsystems and systems for the broadband and specialty fiber-optics markets - has been awarded a $4.7m purchase order ...
Tags: optical chips, fiber-optics
At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...
Tags: GaN power devices, SiC