According to Yole Développement's new market research report 'LED Front-End Manufacturing Trends' (which covers substrates, epitaxy, lithography, plasma etching & deposition, PVD and testing), the LED substrate is one of the key ...
Tags: LED, Electrical, Electronics
The global MOCVD equipment market will increase at a compound annual growth rate (CAGR) of 14.13% over the period 2013-2018, forecasts a new report from market analyst firm TechNavio. According to the report 'Global Metal Organic Chemical ...
Tags: MOCVD, Electrical, Electronics, MOCVD Equipment
Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
Driven by the fanfare over (and over-estimation of) the LCD display market, the LED front-end equipment market experienced an unprecedented investment cycle in 2010-2011, driven mostly by metal-organic chemical vapor deposition (MOCVD) ...
Tags: LED, Electrical, Electronics
Deposition equipment maker Aixtron SE of Aachen, Germany says that Jiangsu Trifortune Electronic Technology Co Ltd of Jintan City, China has ordered an AIX G5 HT metal-organic chemical vapor deposition (MOCVD) system to develop gallium ...
Tags: Aixtron MOCVD, LED
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Researchers in France have reported on solar cell devices based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Sirona Valdueza-Felip et al, Appl. Phys. Express, vol7, p032301, 2014]. Conversion efficiencies of up to 2% ...
Tags: Solar Cells, InGaN
Martini Tech Inc of Tokyo, Japan has started to offer a new gallium nitride (GaN) metal-organic chemical vapour deposition (MOCVD) service on sapphire substrates for LED applications. Founded in 2013, Martini Tech offers microfabrication ...
Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED
Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
Following the boom in expansion of the Chinese LED market in 2011, many industry insiders and analysts speculated on whether China would be able to sustain the growth, or if many companies simply ordered an excessive amount of metal-organic ...
Tags: LED market, LED industry
For full-year 2013, deposition equipment maker Aixtron SE of Aachen, Germany has reported a 20% drop in revenue from 2012’s €227.8m to €182.9m. However, although down 34% on €77.5m a year ago, fourth-quarter revenue was ...
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...