Researchers at Korea's Chonbuk National University and Korea Institute of Science and Technology have improved the contact of graphene with p-type gallium nitride (p-GaN), resulting in improved near-ultraviolet (NUV) light-emitting diodes ...
Tags: Near-ultraviolet LEDs, Graphene GaN MOCVD, Gallium Nitride
New advanced materials like MOFs (metal organic frameworks), advanced high-strength steel, and carbon nanotubes have the potential to enable novel products and disrupt existing businesses. However, material commercialization timelines are ...
Tags: Construction, Decoration
Researchers in China have developed a selective area epitaxy (SAE) approach to create nanopyramids of nitride semiconductor 'white' light-emitting diodes (LEDs) without using phosphors [Kui Wu et al, Appl. Phys. Lett., vol103, p241107, ...
Tags: Electrical, Electronics, LED
Researchers based in Korea and Egypt have used wafer thinning to increase the efficiency of nitride semiconductor green light-emitting diodes (LEDs) [Wael Z. Tawfik et al, Appl. Phys. Express, vol6, p122103, 2013]. The contributing ...
Researchers at University of California Santa Barbara (UCSB) have used low-temperature metal-organic chemical vapor deposition (MOCVD) of p-type gallium nitride (GaN) to achieve intentional surface roughening of a solar cell device, thereby ...
Tags: Ingan Solar Cell, MOCVD
Hydrogen gas impurity analyzer manufacturer Power+Energy Inc (P+E) of Ivyland, PA, USA has established sales alliances with Labcare Scientific Group in mainland China, HongKong and Macau SAR as well as AccuDEVICE Co Ltd in Taiwan. Both ...
Tags: Power, Energy, Electrical, Electronics
It is known that metal-organic vapor phase epitaxy (MOVPE) growth of AlGaAs on GaAs is limited by lattice mismatch at room temperature and not at growth temperature (A. Maassdorf et.al., J. Cryst. Growth 370 (2013) 150-153), notes in-situ ...
Tags: Laser Structures, Electronics
Researchers at the National Institute of Advanced Industrial Science and Technology (AIST) in Japan have used evanescent wave coupling to enhance the light output power of red light-emitting diodes (LEDs) by a factor of 3.8 [Guo-Dong Hao ...
Tags: Red LEDs AlGaInP, LED, Electrical, Electronics
In-situ metrology system maker LayTec AG of Berlin, Germany says that Dr Tony SpringThorpe of the National Research Council of Canada recently reported fast and easy temperature calibration of all three heating zones of his showerhead ...
Tags: Electrical, Electronics
University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
Researchers at Meijo University and Nagoya University, Japan, have produced low-resistance n-type aluminium gallium nitride (n-AlGaN) [Toru Sugiyama et al, Appl. Phys. Express, vol6, p121002, 2013]. Using the n-AlGaN as part of an ...
Tags: LED, Electrical, Electronics
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
Emcore Corp of Albuquerque, NM, USA, which makes compound semiconductor-based components and subsystems for the fiber-optic and solar power markets, says that Dr Thomas Russell has decided to not stand for re-election to the board at the ...
Tags: Emcore, electronics
Researchers in Taiwan have used cadmium selenide (CdSe) quantum dots (QDs) to increase the power conversion efficiency of three-junction solar cells by around 10% [Ya-Ju Lee et al, Optics Express, Vol. 21, pA953, 2013]. The team was ...
Tags: CdSe CdSe quantum, Three-junction solar cells p-Ge substrates MOCVD
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...