Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...
IBM is investing $3bn over the next 5 years in two broad research and early-stage development programs to push the limits of chip technology needed to meet the emerging demands of cloud computing and ‘big data’ systems. The ...
Tags: IBM, Big-Data Systems
FinScale Inc of Livermore, CA, USA, which develops and licenses device and process innovations for the semiconductor industry, has announced availability of its qFinFET technology, a next-generation 3D MOSFET architecture and manufacturable ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, is to give application-focused ...
Tags: EPC, E-mode, GaN, FETs, Electrical, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is showcasing its latest devices in booth 13 at the 16th European ...
Tags: GaN Systems Power electronics, Electrical, Electronics
Doing more with less is the mantra of our era. Nowhere is this more apparent than in the drive towards miniaturization in the next generation of electronic components and systems. The push for smaller parts is coming both from the need ...
Tags: Miniaturization, Electrical, Electronics
Deposition equipment maker Aixtron SE of Aachen, Germany says that Vishay Semiconductor GmbH of Heilbronn, Germany has acquired a metal-organic chemical vapor deposition (MOCVD) system (delivered at the end of March) to expand its infrared ...
Tags: Aixtron, MOCVD, Electrical, Electronics
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM GaN RF power transistors, transistors, Electrical, Electronics
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...
Tags: GaN Technologies, HEMT structures, electronics components
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors
Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
Based on a scenario where electric vehicles and hybrid electric vehicles (EV/HEV) begin adopting gallium nitride (GaN) in 2018-2019, the ramp-up of the GaN power device market will be quite impressive starting in 2016, at an estimated ...
Tags: Yole GaN HEMT Power electronics, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that Dr John Glaser has joined its ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics