University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
You might not know what "lattice-matched heterojunctions" are, but if you stopped at a new stoplight, played a DVD or used a laser pointer, you've made use of technology pioneered by Jerry Woodall, distinguished professor of electrical and ...
Brewer Science Inc of Rolla, MO, USA, which provides thin-wafer-handling materials, processes and equipment, has announced the first commercial placement of its Cee 1300CSX thermal slide debonder. The debonder was purchased by "an industry ...
Tags: Brewer Science, debonder, thermal slide debonder, electronic
In conjunction with the Defense Manufacturers Conference (DMC 2013) in Orlando, FL (2-5 December), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is releasing new gallium arsenide ...
Researchers in Taiwan have used cadmium selenide (CdSe) quantum dots (QDs) to increase the power conversion efficiency of three-junction solar cells by around 10% [Ya-Ju Lee et al, Optics Express, Vol. 21, pA953, 2013]. The team was ...
Tags: CdSe CdSe quantum, Three-junction solar cells p-Ge substrates MOCVD
Solexant Corp of San Jose, CA, USA has announced a new corporate identity as Siva Power, the culmination of a two-year transition to a platform that aims to create a profitable path to sub-$0.40 per watt solar power, along with what it ...
Tags: NREL PVMC CIGS, Electrical, Electronics, PV
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
Tokyo-based Mitsubishi Electric Corp has launched the MGF4937AM gallium arsenide (GaAs) high-electron-mobility transistor (HEMT), as a low-noise amplifier (LNA) for receiver modules in direct broadband satellites (DBS) and very small ...
Graphene on silicon carbide (SiC) has been shown to give an accurate resistance standard and to outperform the presently used gallium arsenide (GaAs) devices in many aspects. Now, researchers at the Centre for Metrology and Accreditation of ...
Tags: Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA, which makes semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications, has agreed to acquire Mindspeed Technologies Inc of Newport Beach, CA, USA ...
Tags: M/A-COM Mindspeed, Electrical, Electronics
By using a unique silicon fin replacement process, Imec of Leuven, Belgium has demonstrated what it claims are the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers. The nanoelectronics ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched a gallium arsenide (GaAs) ...
Tags: Electrical, Electronics
Sofradir of Chatenay-Malabry, near Paris, France, which makes infrared (IR) detectors based on mercury cadmium telluride (MCT/HgCdTe), indium antimonide (InSb), quantum-well infrared photodetector (QWIP) and indium gallium arsenide (InGaAs) ...
Tags: Electrical, Electronics
For third-quarter 2013, AXT Inc of Fremont, CA, USA has reported revenue of $20.5m, down 1.4% on $20.8m a year ago and 14% on $23.8m last quarter. Fiscal Q3/2012 Q4/2012 Q1/2013 Q2/2013 Q3/2013 Revenue $20.8m $18.9m $22.4m $23.8m $20.5m ...
At the Society of Cable Telecommunications Engineers (SCTE) Cable-Tec Expo 2013 in Atlanta (22-24 October), broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA launched the ACA1240 CATV Edge QAM ...
Tags: Anadigics, Qam Amplifier