Teledyne Technologies has agreed to acquire LeCroy in a deal valued at $291m. LeCroy, which supplies oscilloscopes and signal analysers, will be merged into Teledyne, a more broad-based instrumentation firm and defence systems supplier. ...
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems for bandwidth-intensive, high-speed ...
Tags: NeoPhotonics Corp, portfolio, networks, high-bandwidth
For second-quarter 2012, NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems, exceeded its ...
Tags: NeoPhotonics Corp, InP, PIC
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), has announced the deployment of 100 Gigabit ...
Researchers in the USA have achieved record transconductance and cut-off frequencies for indium gallium arsenide (InGaAs) channel metal-oxide field effect transistors (MOSFETs) [D.-H. Kim et al, Appl. Phys. Lett., vol101, p223507, 2012]. ...
11 October 2012 In the Infinera Express truck on booth#2917 at the SCTE Cable-Tec Expo in Orlando,FL(17-19 October),Infinera Corp of Sunnyvale,CA,USA,a vertically integrated manufacturer of digital optical network systems incorporating ...
Tags: Infinera, DTN, Orlando, SCTE Cable-Tec Expo
According to the report 'Photonic Integrated Circuit (IC) & quantum computing Market-By Application (optical fiber communication, Optical Fiber sensors, Biomedical, Others), Integration (Hybrid, Module & Monolithic), Components, Raw ...
Tags: PICs, MarketsandMarkets, market revenue, CAGR, raw materials
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), says that CenturyLink Inc has deployed the ...
Tags: Infinera, InP, PICs, optical network, CenturyLink, DTN-X platform
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), has announced what it says is the ...
Tags: Infinera, digital optical network, PICs, ESnet, demonstration, SDN OTS
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), says that Colt Technology Services has made ...
Tags: Infinera, InP, PICs, Infinera Corp of Sunnyvale
Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors