Abraxas Petroleum Corporation (NASDAQ:AXAS) is pleased to provide the following operational and acquisition update. "Given the early results of the Blue Eyes 1H, we have elected to drill the Snake Eyes 1H on the company's Jourdanton ...
Tags: Abraxas Petroleum Corporation, acquisition, operational update
AWE Limited (ASX: AWE), is pleased to announce that it has completed the purchase of an additional 15% interest in the Tui area oil project and an additional 6.25% in the Oi exploration well, located offshore New Zealand in PMP 38158, from ...
Tags: Oil and Gas News, AWE, purchase, Tui
EOG Resources is reaping such high volumes of liquids from key US resource plays that it has raised its 2013 year-over-year production growth target for oil and condensate to 35% from 28%, its executive chairman said Wednesday. At the ...
The US Naval Research Laboratory (NRL) in Washington DC has developed a method to grow epitaxial nitride semiconductors on graphene [Neeraj Nepal et al, Appl. Phys. Express, vol6, p061003, 2013]. The researchers hope that this could lead to ...
Tags: Graphene, Electrical, Electronics, hot-electron transistors
LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
The Mitsubishi GR-HEV concept has been revealed ahead of its unveiling at Geneva motor show later today. The GR-HEV concept (the name means ‘Grand Runner Hybrid Electric Vehicle’) gives us our first look at Mitsubishi’s ...
Seidio, a manufacturer of premium mobile technology accessories, begins shipping the OBEX case for iPhone 5. Using advanced technology and durable materials, the OBEX, (Latin for “barrier”) offers unbeatable, extreme protection ...
Researchers in Taiwan and USA have developed lateral insulated-gate bipolar junction transistors (IGBTs) using 4H silicon carbide (SiC) technology [Kuan-Wei Chu et al, IEEE Electron Device Letters, published online 9 January 2013]. ...
Tags: insulated gate bipolar transistors, silicon carbide, Electron Device
Smart Fog Inc announced the release of 2013 TS100 In-Duct HVAC commercial humidifier.The new 2013 edition of Smart Fog HVAC/R technology provides accurate non condensing in-duct humidification.Any climate controlled facility need to ...
Tags: Smart Fog, non condensing humidification, Commercial Humidifier Types
Raytheon Company of Waltham, MA, USA says that its technology facility in Glenrothes, Scotland, UK has successfully tested silicon carbide (SiC) mixed-signal devices at temperatures up to 400°C. “Raytheon UK’s aim is to ...
Tags: Raytheon, SiC, silicon carbide, company news
Researchers based in the USA and France have created graphene nanoribbon structures with regions that have relatively large energy bandgaps of about 0.5eV [J. Hicks et al, Nature Physics, published online 18 November 2012]. Flat graphene ...
Tags: silicon carbide, graphene, nanoribbon structures, bandgaps, energy bands
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer
Cree Inc of Durham,NC,USA has introduced low basal plane dislocation(LBPD)100-mm 4H silicon carbide(SiC)epitaxial wafers.This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer,with BPDs capable of causing Vf ...
Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer