Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs), has augmented its Optan SMD (surface-mount device) product line for instrumentation with the addition of ...
Tags: Crystal IS, UVC LEDs
Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs), is now ISO 9001:2008 certified. The firm's UVC LEDs are based on Crystal IS' proprietary native aluminium ...
Tags: Crystal IS, UVC LEDs, Electronics
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
At the 2015 Elektra Awards ceremony at The Lancaster Hotel in London on 24 November, Cambridge Nanotherm Ltd of Haverhill, Suffolk UK, a producer of thermal management technology, has won the LED Lighting Product of the Year award (beating ...
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
HexaTech Inc. announced today that it has received a continuation of funding under the U.S. Department of Energy's Advanced Research Projects Agency (ARPA-E) development program. The cost-share extension is valued at $1.2 million over 1 ...
Tags: HexaTech, AlN, semiconductor
Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, says that its newest Optan product ...
Tags: Crystal IS, UVC LEDs
Crystal IS’s newest Optan product is a surface mount device (SMD). Like other Optan offerings, the high-performance UVC LED is based on native Aluminum Nitride (AlN) substrates, proven to overcome limitations of other UVC LEDs in the ...
Tags: Crystal IS, Uvc Leds, OptanSMC
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
HexaTech Inc of Morrisville, NC, USA, which manufactures aluminium nitride (AlN) substrates and is developing long-life UV-C LEDs and high-voltage power devices, has signed a broad, strategic agreement with Okaya & Co Ltd of Nagoya, Japan, ...
Tags: UV-C LED, LED products
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
In hall B1 (booth 403) at Laser World of Photonics 2015 in Munich, Germany (22-25 June), engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – represented by its subsidiaries II-VI Suwtech of China ...
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices