Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
Finnish thin film coating specialist Picodeon Ltd Oy has developed its ultra-short pulsed laser deposition (USPLD) surface coating technology to be able to create either porous or dense aluminium oxide (Al2O3) coatings on heat-sensitive ...
Lund University has developed multi-gate (MuG) III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) with a cut-off frequency of 210GHz and a maximum oscillation frequency of 250GHz, “the highest of any reported ...
Tags: effect transistors, fins, plasma, Electrical&Electronics
The Aluminum Corporation of China Ltd. (Chalco), the listed arm of the country's largest maker of lightweight metal, said it made net profits of 948 million yuan ($154.87 million) in 2013, reversing heavy losses in 2012. Total revenues ...
The overall precision surface grinder is a very effective machine tool that is completely capable of very well working to a fine tolerance of plus or minus 0.002 millimetres, or to around plus or minus one ten thousandth part of an inch in ...
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
University of Illinois at Urbana-Champaign has realized junctionless (JL) gallium arsenide (GaAs) nanowire field-effect transistors (NWFETs) "for the first time" by implantation-free source/drain metal-organic chemical vapour deposition ...
Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...
Tags: Electrical, Electronics, E-Mode
Researchers in China have developed a silicon dioxide (SiO2) on aluminium oxide (Al2O3) passivation for nitride semiconductor light-emitting diodes (LEDs) that offers more than two orders of magnitude reduced current leakage under reverse ...
Peking and Xidian universities have jointly developed a self-terminating gate recess etch that allows them to produce aluminium gallium nitride (AlGaN) normally-off metal-oxide-semiconductor field-effect transistors (MOSFETs) with positive ...
Tags: Electrical, gate recess etch
In what is possibly the geekiest rivalry in the smartphone industry—and that takes effort—the maker of tough smartphone screens known as Gorilla Glass is arguing that its much-hyped challenger sapphire is weaker, not to mention ...
Tags: Sapphire Screens, Gorilla Glass
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
This study of microgranular adsorptive filtration (µGAF) investigates the role of adsorbent particle size, adsorbent surface loading, and membrane pore size in fouling of µGAF systems by natural surface water. Fouling of ...
Aluminium is an incredibly popular and versatile modern metal. From the roll of foil that every kitchen can't live without to the super-modern components of fighter jets and sports cars; aluminium is widely used around the globe. ...
Tags: Metallurgy, Mineral, Aluminium
The next generation of smartphones could have bullet-proof sapphire-glass screens thanks to improved production techniques and falling prices. One of the many rumours surrounding Google's upcoming X Phone is that it will feature a ...