IBM has introduced the fifth generation of its semiconductor technology specialized for high-performance communications. The firm’s latest silicon-germanium (SiGe) chip-making process is designed to enable increasing amounts of data ...
Tags: IBM, SiGe Tektronix
Tokyo-based Mitsubishi Electric Corp says that it has begun shipping three new types of silicon carbide (SiC) power module for home appliances, industrial equipment and railcar traction systems. The modules, which use Schottky barrier ...
Tags: Mitsubishi Electric, Electric
Toshiba has started volume production of silicon carbide (SiC) power devices at Himeji in the Hyogo Prefecture in anticipation of growing demand for industrial and automotive applications. Toshiba will manufacture Schottky Barrier Diodes ...
Tags: Toshiba, SIC, Electronics
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
Toshiba has added to its small-signal,medium-power Schottky barrier diodes(SBDs)and MOSFETs that are suitable for wireless power transfer applications. The range of devices covers single and dual n-and p-channel MOSFETs as well as ...
Skyworks launches analog solutions for automotive toll tag systems Skyworks Solutions Inc of Woburn,MA,USA(which manufactures high-reliability analog and mixed-signal semiconductors)has introduced analog solutions for low-noise receivers ...
Tags: Skyworks, automotive toll tag systems, RF mixer, application