Researchers in France believe they have made preliminary steps towards establishing a silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) platform for quantum information processing. Quantum information processing ...
Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA says that Michael Shur (its Patricia W. and C. Sheldon Roberts Professor of Solid State Electronics) is to receive an Achievement award from the UK's Institution of Engineering and ...
Tags: DUV LED Research, transistor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2107 (100V) and ...
Tags: electronic components, semiconductor, EGaN Power, wireless power transfer
Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, has raised €5.7m in first-round financing that will be used to produce high-speed power switching ...
Tags: GaN-on-Si, GaN switching device
X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan's GaN-on-silicon technology, begin producing high-speed power switching ...
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has expanded its portfolio of RF switches with a suite of analog control ICs for a variety of Internet of Things applications including ...
Tags: Skyworks, switching technologies
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced an eGaN FET designed with a ...
To provide an easy-to-use way for power systems designers to evaluate the performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which ...
Tags: EPC, FETs, Electronics
Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2027, a 450V normally ...
Tags: medical diagnostic equipment, solar power inverters, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC2101, a 60V ...
Japan’s National Institute of Advanced Industrial Science and Technology (NAIST) has claimed the highest breakdown voltage to date for a diamond metal-semiconductor field-effect transistor (MESFET) [Hitoshi Umezawa et al, IEEE ...
Texas Instruments (TI) (NASDAQ: TXN) today introduced the industry's first fully integrated high-brightness LED matrix manager IC for adaptive automotive headlight systems. The TPS92661-Q1 is a compact, scalable solution that enables ...
Tags: TI, Matrix Manage, Accessories
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2100, the first ...
Tags: EPC, EPC2100, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...