X-FAB Silicon Foundries AG of Erfurt, Germany - an analog/mixed-signal and micro-electro-mechanical systems (MEMS) foundry - has announced what it claims is the first cost-efficient 180nm silicon-on-insulator (SOI) technology for automotive ...
Tags: X-FAB, SOI, electrical components
X-FAB Silicon Foundries, the leading More than Moore foundry, has announced the industry’s first cost-efficient 180nm SOI technology for automotive and industrial applications that need to operate in harsh environments. X-FAB's new ...
Tags: X-FAB, SOI technology, high-voltage devices, auto accessories
Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), silicon carbide (SiC)-based power product maker Cree Inc of Durham, NC, USA — exhibiting with distributor partner MEV Elektronik Service GmbH ...
Tags: Power Conversion, Cree
The outstanding reputation of China's high speed rail (HSR) industry not only shows the success of domestic innovation but also represents a shift from the export of mass produced "Made in China" products. China North Railway (CNR) and ...
Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2015, taking place March 15-19 in Charlotte, North Carolina. In booth 501, the company will ...
Tags: Vishay, APEC 2015, power MOSFET
After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...
Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical
Tokyo-based Mitsubishi Electric Corp has launched its large hybrid silicon carbide (SiC) transfer-mold dual in-line package intelligent power module (DIPIPM), which incorporates a SiC Schottky barrier diode (SBD) and seventh-generation IGBT ...
Tags: hybrid silicon carbide, dual in-line package intelligent power module
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting at the Electronica 2014 trade fair in Munich, Germany ...
Tags: GaN Systems, semiconductors
Dana Holding Corporation announced today the introduction of a new aluminum cooling technology for electric and hybrid vehicles. Specifically, the company is utilizing the efficiency of aluminum in its Long® brand of integrated ...
The next-generation power semiconductor market will increase at a compound annual growth rate (CAGR) of 63% between 2011 and 2017 to more than $500m, forecasts market research firm The Information Network in its report 'Next-Generation ...
Tags: Power Semiconductor, Electronics
Cree Inc of Durham, NC, USA has expanded its silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module suited for 5-15 kW three-phase applications. Based on Cree’s C2M SiC MOSFET and Z-Rec SiC Schottky ...
Tags: Cree, SiC, Electronics
Cree Inc of Durham, NC, USA has released what it claims is the first all-SiC (silicon carbide) 1.7kV power module in an industry-standard 62mm housing. Powered by Cree's C2M large-area SiC chip technology, the new half-bridge module ...
Vishay Intertechnology, Inc. VSH +0.23% today announced that it will be exhibiting its latest semiconductors and passive components in booth 1C-205 at Power System Japan, a focused exhibition on power systems at Techno-Frontier 2014, being ...
Tags: Vishay, Electrical, Electronics