Researchers based in the USA and Korea have found "an unequivocal correlation between the onset of high injection and the onset of the efficiency droop" of gallium indium nitride (GaInN) light-emitting diodes (LEDs) [David S. Meyaard et al, ...
Tags: LED, Nitride LED, Electrical, Electronics
Researchers in China and Turkey have been using varying-thickness gallium nitride (GaN) barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve hole distributions and thus to reduce efficiency droop effects ...
Tags: InGaN LEDs, Electrical, Electronics
Researchers in Korea have used three-dimensional (3D) graphene foam as a transparent conductor for the p-contact of blue nitride semiconductor light-emitting diodes (LEDs) [Byung-Jae Kim et al, Appl. Phys. Lett., vol102, p161902, 2013]. The ...
Tags: Graphene foam, LEDs
Researchers based in China and Sweden have proposed fast chemical vapor deposition (CVD) of graphene as a route to more cost-effective transparent conducting layers (TCLs) for nitride semiconductor light-emitting diodes (LEDs) [Xu Kun et ...
Toshiba's white LED package Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si)?technology and related assets to Toshiba. The news comes as the two companies announced that they will expand their licensing and manufacturing ...
Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si) technology and related assets to Toshiba Toshiba’s white LED package The two companies also announced they will ramp up a factory in Japan to make LEDs based ...
Tags: Bridgelux, GaN-on-Si Assets
Gallium nitride has been described as “the most important semiconductor since silicon” and is used in energy-saving LED lighting. A new £1million (or US$1,530,700) growth facility will allow University of Cambridge ...
Tags: GaN LEDs, Electrical, lighting
Researchers in South Korea have developed a new gold-doping process for graphene transparent conducting layers (TCLs) that improves its adhesion and electrical contact with near-ultraviolet light-emitting diodes (NUV-LEDs) [Chu-Young Cho et ...
Tags: NUV-LEDs GaN Graphene, Electrical, Electronics, LED
NTT Basic Research Laboratories in Japan has used hexagonal boron nitride (h-BN) layers to release nitride semiconductor light-emitting diodes (LEDs) from sapphire and transfer them to commercially available adhesive tape [Toshiki Makimoto ...
Tags: LED
Taiwan’s National Chung Hsing University has used nitride semiconductor growth on gallium nitride nanocolumns and nanoporosity achieved with photoelectrochemical etching to boost the light output power of light-emitting diodes (LEDs) ...
Tags: LEDs, Air-Channels, Nanoporous Structure
Production of LED chips is typically done on 2- to 4-inch wafers with an expensive sapphire substrate. Toshiba and Bridgelux, Inc. have developed a process for manufacturing gallium nitride LEDs on 200mm silicon wafers, which Toshiba has ...
Tags: LED chips, LEDs, Kaga Toshiba Electronics Corporation, lighting
Toshiba Corporation (Tokyo: 6502) announced that the company will start sales of white light-emitting diode (LED) packages that offer makers of general purpose and industrial LED lighting solutions a cost-competitive alternative to current ...
Tags: Toshiba, LED packages, LED lighting, LED, lighting
Yale University has developed techniques to release nitride semiconductor layers and transfer them to other substrates, allowing vertical current-flow light-emitting diodes (LEDs) [Yu Zhang et al, Appl. Phys. Lett., vol100, p181908, 2012]. ...
Germany increases focus on infrastructure,LED lighting 26 Jun Germany has invested in SSL in automobiles and street lights,and now broader investments are being encouraged to build a larger SSL manufacturing base.Hella research says LED ...
Tags: Germany, LED lighting
The impact of using a vertical current injection structure was also seen in a higher external quantum effi- ciency (EQE) of 16.2% at 350mA, com- pared with 13.2% for the LLED. At 550mA, the VLED EQE fell 11.9%, com- pared with14.6% for the ...
Tags: LED