Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic ...
Tags: SiC MOS module, Schottky diode, inverters
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has launched a family of 1200V Schottky diodes based on silicon carbide (SiC) material and technology. ...
Tags: SiC
Power Integrations has released a reference design kit for a 150 W,48 V power supply for LED streetlights and other industrial/infrastructure lighting systems.The driver circuit described in RDR-292 is more than 93%efficient at 230 VAC ...
Tags: Power Integrations LED Driver, lighting systems, resonant converter IC
High level of integration brings performance and cost benefits to LED streetlights,parking garages,tunnels,warehouses and industrial lighting Power Integrations,maker of the world's most efficient,longest-lasting off-line LED driver ...
Tags: 150 W LED-Driver, Calif, Power Integrations, RDK-292
Researchers in China based at State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,have demonstrated a selective area growth(SAG)method for recessing gates in aluminium gallium nitride(AlGaN)semiconductor ...