Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
Panasonic Corporation today announced that it has developed a blue-violet semiconductor laser operating at output power of 4.5 W, which is 1.5 times higher than that of the conventional one even at 60ºC, the maximum operating ...
Tags: Panasonic, high power, blue violet semiconductor laser
Panasonic Corp of Osaka, Japan has developed a blue-violet semiconductor laser with light output power of 4.5W (continuous wave). Even at 60oC (the maximum operating temperature for lasers in general), this is 1.5 times higher than the 3W ...
Tags: Panasonic, Blue-Violet Laser
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
At the IEEE MTT-S International Microwave Symposium (IMS 2015) in Phoenix, AZ (19-21 May), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
Tags: Power Transistor, Linear Operation
Diamond Microwave Devices Ltd of Leeds, UK (which was spun out in 2006 from the diamond electronics team of Element Six and specializes in high-performance microwave power amplifiers) has re-designed its range of gallium nitride (GaN)-based ...
In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
In booth #608 at the Optical Fiber Conference (OFC 2015) in Los Angeles (24-26 March), Emcore Corp of Alhambra, CA, USA (which provides compound semiconductor-based optical components, subsystems and systems for the broadband and specialty ...
Tags: Emcore CATV, DOCSIS, Electronics
Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
Northwestern University’s Center for Quantum Devices in USA has developed a monolithic room-temperature terahertz (THz) source based on quantum cascade lasers (QCLs) [Q. Y. Lu et al, Appl. Phys. Lett., vol105, p201102, 2014]. The ...
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has introduced what are claimed to be the industry’s highest thermal and wideband performance GaN device with a 125W continuous wave (CW) gallium nitride on ...
Tags: Power Transistor, Electrical
In booth #1505 at the Society of Cable Television’s (SCTE) Cable-Tec Expo in Denver (23-25 September), Emcore Corp of Albuquerque, NM, USA, which makes compound semiconductor-based components and subsystems for the fiber-optic and ...