STMicroelectronics of Geneva, Switzerland has unveilled a family of high-voltage silicon carbide (SiC) power MOSFET products, enabling power supply designers to drive up energy efficiency in applications such as solar inverters and electric ...
Tags: Sic Power Mosfets, STMicroelectronics, high-voltage silicon carbide
The global market for power discrete devices will rise at a compound annual growth rate (CAGR) of 8.43% over 2013-2018, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). According to the ...
ROHM Semiconductor of Santa Clara, CA (the US arm of system LSI, discrete components and module product maker ROHM Co Ltd of Kyoto, Japan) has launched two 80milliOhm 1200V silicon carbide MOSFETs, the SCT2080KE and SCH2080KE, designed to ...
Tags: Electrical, Electronics
The UK's capacity in power electronics has received an £18m boost from the UK's Engineering and Physical Sciences Research Council (EPSRC) with the opening of the first EPSRC National Centre of Excellence for Power Electronics. As ...
Tags: Power electronics, Electrical, Electronics
Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic ...
Tags: SiC MOS module, Schottky diode, inverters
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the immediate availability of its GB100XCP12-227 second-generation hybrid mini-modules using 1200V/100A SiC Schottky rectifiers ...
The inverter market grew significantly to $45bn in 2012, and will reach $71bn by 2020, according to Yole Développement in a report on ‘Inverter market trends for 2013-2020 and major technology changes’. “More than ...
Photovoltaic inverter design is now seen as the crucial element in solar power development, writes James Turner, and he discusses some of the challenges that can shape PV inverter design. Over the last few years the photovoltaic (PV) ...
Researchers in Taiwan and USA have developed lateral insulated-gate bipolar junction transistors (IGBTs) using 4H silicon carbide (SiC) technology [Kuan-Wei Chu et al, IEEE Electron Device Letters, published online 9 January 2013]. ...
Tags: insulated gate bipolar transistors, silicon carbide, Electron Device
Power management semiconductor market to rise 9.7% during Q2 The global power management semiconductor market is expected to report 9.7% rise during the second quarter of 2012 (2Q12) to $7.9bn when compared to $7.2bn during the first ...
Tags: power management, semiconductor, electronic products, smartphones
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer
Cree Inc of Durham,NC,USA has introduced low basal plane dislocation(LBPD)100-mm 4H silicon carbide(SiC)epitaxial wafers.This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer,with BPDs capable of causing Vf ...