Fukuda Crystal Laboratory Co Ltd has grown ScAlMgO4 scandium aluminium magnesium oxide (SCAM) crystal with a diameter of 50mm (2 inches) that could be used as a substrate for gallium nitride (GaN)-based light-emitting devices such as blue ...
Tags: Fukuda Crystal Lab, a diameter, Electrical
In booth #1933B at the LightFair International 2014 exhibition in Las Vegas (3-5 June), LatticePower of Nanchang, Jiangxi Province, China – which claims to be the first firm to commercialize gallium nitride on silicon (GaN-on-Si) LEDs ...
Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
GaN-on-Si technology has emerged naturally as an alternative to GaN-on-sapphire — the mainstream technology for LED applications. But today, despite potential cost benefits, the mass adoption of GaN-on-Si technology for LED ...
Tags: GaN-on-Si, Electrical, Electronics
Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
The US Department of Energy's National Energy Research Scientific Computing Center (NERSC) has conducted simulations showing that nanostructures half the width of a DNA strand could enhance the efficiency of LEDs. In particular, efficiency ...
Tags: InN Green LEDs, LED
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
It is known that metal-organic vapor phase epitaxy (MOVPE) growth of AlGaAs on GaAs is limited by lattice mismatch at room temperature and not at growth temperature (A. Maassdorf et.al., J. Cryst. Growth 370 (2013) 150-153), notes in-situ ...
Tags: Laser Structures, Electronics
silicon to play major role in LED production 13 Dec 2013 IHS predicts rapid transition to GaN-on-silicon LED manufacture for backlighting and some general lighting applications. Silicon switch In a dramatic change from the status ...
Tags: IHS, LED Production, LED
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
By using a unique silicon fin replacement process, Imec of Leuven, Belgium has demonstrated what it claims are the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers. The nanoelectronics ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
Chinese Academy of Sciences' Semiconductor Lighting R&D Center at the Institute of Semiconductors in Beijing has developed an electrically driven color-tunable light-emitting diode (LED) based on indium gallium nitride (InGaN) quantum wells ...
Tags: LED, Electrical, Electronics, Semiconductor
KULeuven (Katholieke Universiteit Leuven), nanoelectronics research center Imec of Leuven, Belgium and the National Institute of Advanced Industrial Science and Technology (AIST) of Tsukuba, Japan have developed a solid-phase epitaxy ...
Asahi Kasei Microdevices Corporation and Kyushu University in Japan detectors based on indium antimonide (InSb) [Koichiro Ueno et al, Jpn. J. Appl. Phys., vol52, p092202, 2013]. The reshave developed room-temperature mid-infrared ...
Tags: Photodiode, Electrical, Electronics