Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics
In booth 4D18 at PCIM (Power Conversion Intelligent Motion) Asia 2015 in Shanghai (24–26 June), GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for ...
Tags: GaN Systems, Power electronics, Transistor
Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
Panasonic Corp of Osaka, Japan and Osaka-based Sansha Electric Manufacturing Co Ltd have developed a compact silicon carbide (SiC) power module, together with highly efficient operation of power switching systems. The module is said to have ...
Tags: Panasonic, silicon carbide
Tokyo-based Mitsubishi Electric Corp has launched its large hybrid silicon carbide (SiC) transfer-mold dual in-line package intelligent power module (DIPIPM), which incorporates a SiC Schottky barrier diode (SBD) and seventh-generation IGBT ...
Tags: hybrid silicon carbide, dual in-line package intelligent power module
Cree Inc of Durham, NC, USA has expanded its silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module suited for 5-15 kW three-phase applications. Based on Cree’s C2M SiC MOSFET and Z-Rec SiC Schottky ...
Tags: Cree, SiC, Electronics
Cree Inc of Durham, NC, USA has released what it claims is the first all-SiC (silicon carbide) 1.7kV power module in an industry-standard 62mm housing. Powered by Cree's C2M large-area SiC chip technology, the new half-bridge module ...
Tokyo-based Mitsubishi Electric Corp has launched a transfer-molded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide (SiC) transistors and diodes that is expected to help reduce the power ...
Cree Inc of Durham, NC, USA says that its silicon carbide (SiC) technology continues to enable smaller, lighter, more efficient and lower-cost power systems with a new all-SiC 300A, 1.2kV half-bridge module. Packaged in an industry-standard ...
Tags: Electrical, Electronics, Module
Tokyo-based Mitsubishi Electric Corp has received an order for its railcar traction inverter with all-silicon carbide (SiC) power modules (made with SiC transistors and SiC diodes), placed by Odakyu Electric Railway Co Ltd. This is the ...
Tags: Electrical, Electronics
The South Korean government previously regulated type certification system has been a new security system for authentication instead, The new certification process from several private enterprises to assume that they are KTL, KETI. ESAK. ...
Tokyo-based Mitsubishi Electric Corp has developed a prototype electric vehicle (EV) motor drive system with a built-in silicon-carbide (SiC) inverter. Reckoned to be the smallest of its kind, the EV motor drive system is intended to ...
LED lighting application is gradually maturing. In order to continue lowering costs for LED lighting products, there is a growing trend of manufacturers adopting High Voltage (HV) LEDs to simplify the power supply design. A large chunk of ...
Tags: HV LEDs, LED Lighting
Tokyo-based Mitsubishi Electric Corp has launched a railcar traction inverter system for 1500VDC catenaries that incorporates what is claimed to be the first all-silicon carbide (SiC) power modules made with SiC transistors and SiC diodes. ...
Tags: Mitsubishi Electric SiC power modules SiC, Electrical, Electronics