Sophia University in Tokyo, Japan, has used nanocolumns of nitride semiconductor to produce different emission color LEDs in a single growth process for what is claimed to be the first time [Katsumi Kishino et al, Appl. Phys. Express, vol6, ...
Tags: Sophia University, LEDs, Sapphire substrates, LEd lighting
BluGlass Ltd of Silverwater, Australia says that it has succeeded in its initial laboratory experiments in developing p-type gallium nitride (p-GaN) material (essential for making up the top layers of a nitride LED). Spun off from the ...
Tags: BluGlass RPCVD, Macquarie University, RPCVD, nitride LED
Seoul National University and Ritsumeikan University in Korea have developed a new technique for growing higher-quality gallium nitride (GaN) layers at temperatures as low as 500°C [In-Su Shin et al, Appl. Phys. Express, vol5, p125503, ...
Tags: Lights, Instruments, Meters
Yale University has developed techniques to release nitride semiconductor layers and transfer them to other substrates, allowing vertical current-flow light-emitting diodes (LEDs) [Yu Zhang et al, Appl. Phys. Lett., vol100, p181908, 2012]. ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA is presenting at two upcoming LED industry conferences: the 'LED Lighting Evolution Conference: From Sapphire to Lumens' on Wednesday 6 June ...
Tags: Veeco Instruments, LEDs, evolution, MOCVD
Advanced RenewableEnergy Company LLC (ARC Energy) of Nashua, NH, USA, a provider of c-axis sapphire growth technologies and turnkey solutions for the LED solid-state lighting and other clean energy markets, has appointed Dr. Philip C.S. Yin ...
Tags: ARC Energy, China, LED, Dr.Philip C.S.Yin
AIXTRON SE introduced a 5 x 200mm gallium nitride on silicon (GaN-on-Si) reactor design for its G5 Planetary Reactor metal organic chemical vapor deposition (MOCVD) platform. AIX G5+ comprises special reactor hardware and process design, ...
Tags: MOCVD
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
For second-quarter 2012, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $136.5m, down 2% on $139.9m last quarter and 48% on $264.8m a year ago. Fiscal ...
Tags: Veeco, MOCVD, revenue and earnings
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that existing customer UMI Georgia Tech-CNRS in Metz, France has bought a 3x2”-wafer Close Coupled Showerhead (CCS) metal organic chemical vapour deposition (MOCVD) ...
Tags: Aixtron, MOCVD, deposition equipment, chemical vapour deposition
University of California,Santa Barbara(UCSB)has demonstrated for the first time nonpolar m-plane(10-10)nitride semiconductor vertical-cavity surface-emitting laser(VCSEL)diodes[Casey Holder et al,Appl.Phys.Express,vol5,p092104,2012]. The ...
Tags: nitride semiconducto, VCSEL, electrical
Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...
LED manufacturers invested heavily in production equipment in 2010–2011, driven primarily by demand for backlighting for flat panel displays in TVs and computers. Although this driver has moderated and there is currently an oversupply ...
Tags: MOCVD, MOCVD epitaxial process
About half as many metal organic chemical vapor deposition (MOCVD) tools for gallium nitride (GaN) light-emitting diode (LED) manufacture will ship in 2012 than last year, IMS Research reports in its most recent GaN LED Quarterly Supply and ...
Tags: MOCVD
Out of India's total use of electrical power, over 60% in domestic and commercial area is for lighting. As India continues to sleep, China is today lighting up many Indian homes and commercial premises through Indian LED trading businesses ...
Tags: China LED