Using a triple-junction III-V compound semiconductor solar cell (in which three photo-absorption layers are stacked together, Japan’s Sharp Corp has surpassed its record for energy conversion efficiency in research-level ...
Tags: Sharp, Triple-junction solar cell
Electronic component distributor Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has introduced a new 0.7-3.8GHz ultra-low-noise amplifier made by Skyworks Solutions Inc of Woburn, MA, USA. The SKY67151-396LF is a ...
Tags: Richardson RFPD, Electronics
Boeing Company subsidiary Spectrolab Inc of Sylmar, CA, USA has introduced 150mm-diameter germanium wafers into production (50mm larger than its prior 100mm wafers). The 50% increase in wafer diameter allows more than 2.5 times more gallium ...
Tags: Spectrolab CPV, wafer diameter
Scientists from the Niels Bohr Institut in Denmark and the Ecole Polytechnique Fédérale de Lausanne (EPFL) in Switzerland have shown that a single core–shell p–i–n junction gallium arsenide (GaAs) nanowire ...
Tags: Solar Cell, GaAs
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
At the 14th annual IEEE Wireless and Microwave Technology Conference (WAMICON 2013) in Orlando, FL (7-9 April), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA launched three ...
Sol Voltaics AB of Ideon Science Park, Lund, Sweden has unveiled SolInk, a nanomaterial that promises to boost the efficiency of crystalline silicon or thin-film solar modules by up to 25%, leading to solar power plants and rooftop solar ...
Tags: crystalline silicon, solar modules
OPEL Technologies Inc of Toronto, Ontario, Canada – which develops III-V semiconductor devices and processes through US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT – says that Dr Adam Chowaniec and Dr ...
Tags: OPEL, Directors, OPEL Technologies
In a recent blog in mid-March, Eric Higham of market research firm Strategy Analytics noted that gallium arsenide device revenue closed 2012 at a new record of just over $5.3bn, albeit up by just under 2% on 2011. The small gain was driven ...
Tags: GaAs device, Semiconductors
Rubicon Technology Inc of Bensenville, IL, USA, which makes monocrystalline sapphire substrates and products for the LED, RFIC, semiconductor and optical industries, says that the United States Patent and Trademark Office (USPTO) has ...
Tags: Technology, LED, semiconductor
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...
Tags: NMOSFETs, GaAs, GaAs transistor ALE
Researchers at Arizona State University (ASU) have succeeded in developing electrically powered nano-scale lasers that operate effectively at room temperature – a step that could pave the way for their use in a variety of practical ...
Radio-frequency component and compound semiconductor company RF Micro Devices Inc of Greensboro, NC, USA has announced a new gallium arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and ...
Tags: RFMD, flexible GaAs sourcing strategy, semiconductor company
Albis Optoelectronics AG of Zurich, Switzerland, which designs and manufactures high-speed PIN and APD photodiodes for fiber-optic datacom and telecom applications, has announced the availability of the PQW30A-S, a hermetically packaged, ...
National Formosa University in Taiwan has developed a liquid-phase deposition (LPD) process of textured zinc oxide on III-V semiconductor to provide improved absorption of multi-junction solar cells [Po-Hsun Lei et al, J. Phys. D: Appl. ...
Tags: ZnO, germanium solar cells, solar cells