Sensorex (which manufactures sensors for water applications) has introduced the first family of ultraviolet transmittance (UVT) monitors using UVC LEDs instead of mercury-based lamps as a light source. The LEDs are supplied by Crystal IS ...
Tags: UVC LEDs, Sensorex, Electronics
Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, has introduced the Optan ...
Tags: Crystal IS, Optan
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED
Epiluvac AB of Lund, Sweden says that it is now offering silicon carbide (SiC) chemical vapor deposition (CVD) epitaxy reactors in various configurations. As one of the most interesting semiconductor materials in electrical power ...
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
Agnitron Technology Inc of Eden Prairie, MN, USA is scheduled to ship its latest 1500°C+ reactor upgrade for the Veeco metal-organic chemical vapor deposition (MOCVD) D-series Legacy System platform. The single 2”- or ...
Tags: Veeco MOCVD, Reactor
Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor
Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, has announced availability of its ...
Tags: LED, Electrical, Electronics
GaN-on-Si technology has emerged naturally as an alternative to GaN-on-sapphire — the mainstream technology for LED applications. But today, despite potential cost benefits, the mass adoption of GaN-on-Si technology for LED ...
Tags: GaN-on-Si, Electrical, Electronics