University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
The LED industry is now fully embracing the fast-growing lighting market as (based on revenues) LED lighting has become the largest sector among LED applications, surpassing LCD backlighting in 2014, and is expected to be the major driver ...
Tags: LEDs MOCVD, LED Chip
Researchers from Germany and the UK claim record long wavelengths of 7μmfor interband cascade lasers (ICLs) based on indium arsenide (InAs) heterostructures [Matthias Dallner et al, Appl. Phys. Lett., vol106, p041108, 2015]. Devices with ...
Sensor Electronic Technology Inc (SETi) of Columbia, SC, USA, which develops and manufactures deep-ultraviolet (DUV) LED devices and modules, has started shipping samples of its UVC LEDs with 2.5mW of optical power at 265–280nm. First ...
Tags: UVC LEDs, Sensor Electronic
Epiluvac AB of Lund, Sweden has received an order for its EPI-1000X silicon carbide (SiC) reactor from a “leading European research center”. Installation and commissioning of the system will be completed during first-quarter ...
Tags: gas flows, heating system, Electrical
Epistar Corp. and Taiwan Semiconductor Manufacturing Co. (TSMC ) held Board of Directors’ meetings today and approved a sale of TSMC Solid State Lighting (TSMC SSL) shares. Epistar will acquire all shares of TSMC SSL held by TSMC and ...
Northwestern University’s Center for Quantum Devices in USA has developed a monolithic room-temperature terahertz (THz) source based on quantum cascade lasers (QCLs) [Q. Y. Lu et al, Appl. Phys. Lett., vol105, p201102, 2014]. The ...
Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers and III-V epiwafers, has announced the sale of the gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics ...
Tags: sale of GaAs, IntelliEPI, Electronics
The company’s upholds a positive outlook, having made a production capacity breakthrough in June 2014, lowered costs in 3Q14 and optimized utilization rates and product portfolio. Optimistic about the emerging LED lighting market, ...
Tags: Lextar, Production Capacity, Lights
After the recession in 2011 and 2012, the LED industry saw a turning point in 2013 when the die and package LED markets rose 8.3% from 2012 to about $15.188bn, according to the 'Global and China LED Industry Report, 2013-2014' from Research ...
Tags: LED market, LED
In booth #1933B at the LightFair International 2014 exhibition in Las Vegas (3-5 June), LatticePower of Nanchang, Jiangxi Province, China – which claims to be the first firm to commercialize gallium nitride on silicon (GaN-on-Si) LEDs ...
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...