Toshiba will begin mass production of white LEDs on 200-mm silicon wafers this month based on technology that it licensed and jointly developed with Bridgelux. Toshiba has announced that it will begin production of white LEDs on 200-mm ...
Tags: mass production, white LEDs, silicon wafers, GaN-on-SI players
Epistar, Taiwan's largest manufacturer of packaged LEDs has decided to trial silicon-based wafers. The company is hoping to take advantage of cost savings in the backend of the LED manufacturing process to in turn broaden SSL deployment. ...
Utilizing the company's 150 mm templates the advantages of GaN-on-Si can be gained after very short design-in times. The White Paper outlines technical hurdles to be overcome when migrating to GaN-on-Si, covers key achievements possible ...
Tags: LED
AZZURRO Semiconductors AG of Dresden,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,has released a white paper that describes the easy migration of LED manufacturing to GaN-on-Si.Using its ...
Tags: AZZURRO, GaN-on-Si LEDs, Dresden, DTF, Taipei
Toshiba plans silicon-based LED production; Azzurro installs Veeco MOCVD 31 Jul 2012 Veeco Instruments announced that Azzurro Semiconductors has commissioned a new Veeco MOCVD reactor for silicon-based LED production while Toshiba plans to ...
UK-based Plessey Semiconductors Ltd has taken delivery of a CRIUS II-XL metal-organic chemical vapor deposition (MOCVD) reactor (in 7x6-inch wafer configuration) from deposition equipment maker Aixtron SE of Herzogenrath, Germany (which ...
Tags: MOCVD
Plessey Semiconductors has today taken delivery of a CRIUS®II-XL reactor in a 7x6-inch wafer configuration from AIXTRON,as the first part of a multi-million pound investment to create a production line for its new High Brightness ...
Lattice Power says that it is in volume production of high-power gallium nitride LEDs grown on silicon substrates, while Plessey appears to be not far behind. Lattice Power Corporation, a China-based company that is developing gallium ...
Tags: Production, LED, MOCVD system
China-based Lattice Power Corp has started volume production of its new-generation gallium nitride(GaN)-based high-power LEDs on silicon substrate.The firm reckons that the development could set the stage for a sharp reduction in the prices ...
Tags: Lattice Power, LED, High-Power, Lighting
Lattice Power has started mass production of its new generation GaN-based high powered LEDs on silicon substrates,which sets the backdrop for a sharp reduction in the prices of energy-efficient LED light bulbs worldwide.Lattice Power claims ...
Tags: China, Lattice Power, GaN-on-Si LEDs, LED
The pioneer of blue/white gallium nitride-based LEDs on silicon substrate says it is creating the opportunity for a sharp reduction of LED lighting prices Lattice Power Corporation has announced the start of volume production of its new ...
Tags: Market View, led
Toshiba and Bridgelux plan to develop GaN-on-silicon LEDs on 8-inch wafers, making use of Toshiba's capabilities in silicon-based device manufacturing. Toshiba, the Japan-based industrial giant and lighting manufacturer, has made an equity ...
Tags: Toshiba, LED, solid-state lighting
IMEC (Leuven, Belgium), a global research institute, and Siltronic AG (Munich, Germany), a silicon wafer manufacturer, have concluded an agreement to collaborate on the development of gallium-nitride-on-silicon wafers (GaN-on-Si) as part of ...
Tags: led material