Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...
Tags: Raytheon, Electrical Switching
Hanergy Holding Group launched four full solar power vehicles at a grand ceremony arranged outside its headquarters in Beijing. Over 4,000 guests from all sectors of society attended the event. A sports car named "Hanergy Solar R" made ...
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Power management company Eaton today announced the introduction of the Ephesus All Field light-emitting diode (LED) Series. The LED solution provides high schools, colleges, municipalities and other venues with a high-quality, ...
Tags: Eaton, LED, Lighting business
Tokyo-based Solar Frontier - the largest manufacturer of CIS (copper indium selenium) thin-film photovoltaic (PV) solar modules – has begun commercial production at its 150MW Tohoku Plant in Miyagi Prefecture, Japan. Due to using ...
Tags: copper indium selenium, PV
Taiwan-based Everlight Electronics Co Ltd has launched four new ceramic high-reflective-packaged high-power automotive LEDs with a golden lead frame in four different colors - white, PC-amber, red, and super-red - according to the preferred ...
Sol Voltaics AB of Lund, Sweden, which provides nanomaterial technology for enhancing solar panels and other products, has raised $17m in a Series C round of equity investment and grant funding, led by new investor Riyadh Valley Company ...
Tags: Solar Cell, solar panels
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Led by the Department of Energy's Oak Ridge National Laboratory (ORNL), a group of researchers has synthesized a stack of atomically thin monolayers of two lattice-mismatched semiconductors (Xufan Li et al, 'Two-dimensional GaSe/MoSe2 ...
In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...
Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...
In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...
Tags: LED, Nobel Prize
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...