University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
University of Leeds researchers have taken the lead in the race to build the world's most powerful terahertz laser chip. A paper in the Institution of Engineering and Technology's (IET) journal Electronics Letters reports that the Leeds ...
Semiconductor material distributor Wah Lee Industrial is expected to see its revenues decrease within a range of 5% in the first quarter of 2014 thanks to strong sales of silicon wafers in China and rising demand for semiconductor materials ...
Tags: silicon, Semiconductor material, photoresists, chemicals
Apple has filed for a new patent with the U.S. Patent and Trademark Office entitled “Quantum dot-enhanced display having diachronic filter” for enhancement of color accuracy in displays. This patent shows the company’s ...
Tags: Apple, DOT Technology
Soitec of Bernin, France, which makes engineered substrates - including silicon-on-insulator (SOI) wafers and III-V epiwafers - and silicon wafer manufacturer SunEdison Inc of St. Peters, MO, USA have entered into a patent cross-license ...
Tags: Soitec SOI engineered substrates, Electrical, Electronics
A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
Soraa, the world leader in the development of GaN on GaN™ LED technology, announced that it has been awarded several million dollars in funding by U.S. Department of Energy’s Advanced Research Projects Agency - Energy (ARPA-E) ...
Tags: Soraa, GaN Substrates
FLIR thermal imaging is increasingly playing an important part in ensuring maximum energy yield from solar panels. It is involved throughout the life cycle of the product from its design, manufacture and quality assurance procedures ...
Tags: Solar Module, Energy
With the UK's commitment to reducing its greenhouse gas emissions by 80% by 2050, it stands to reason that renewable energy systems will increasingly feature in our built environment. Solar power is one of several technologies that will ...
Tags: Solar Panel, Metallurgy, Mineral, Energy
United Monolithic Semiconductors (UMS), which designs and produces RF, microwave and millimeter-wave components and ICs at its facilities in Orsay, France and Ulm, Germany, has made available enhanced process design kits (PDKs) by using the ...
Tags: UMS Agilent EDA software
Fujifilm Corporation and imec have developed a new *photoresist technology for **organic semiconductors that enables the realization of submicron patterns. (For * please see note at bottom for further explanations.) Due to their ...
Tags: Organic Semiconductors, Lighting
Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...
Tags: InGaN Silicon substrates, LED, Electrical, Electronics
The Chinese Academy of Sciences’ Research and Development Center for Semiconductor Lighting has been exploring the effect of p-type doping of the barriers in multiple quantum well blue-green (~500nm) light-emitting diode (LED) ...
Tags: Blue-Green LEDs, Electronics
Researchers in Guangdong province, China, have been exploring the potential for improved light extraction from nitride semiconductor light-emitting diodes (LEDs) on patterned sapphire substrates with spherical cap bumps [Haiyan Wang et al, ...
Tags: LEDs, Electrical, Electronics