Deposition equipment maker Aixtron SE of Herzogenrath, Germany has received its first purchase order for a Close Coupled Showerhead (CCS) CRIUS MOCVD system from Dynax Semiconductor Inc of China. Aixtron says it will be the first system in ...
Tags: Aixtron, MOCVD, GaN electronic device, semiconductor, epitaxial layers
GaN-on-Si is a new technology that has the potential to replace sapphire substrates in the LED supply chain. Erwin Ysewijn, vice president of sales and marketing at Azzurro Semiconductors, a Germany-based GaN-on-Si supplier, recently ...
Tags: led
Gallium nitride on silicon (GaN-on-Si)-based LEDs have been fabricated using high‐brightness LED structures of Epistar Corp of Taipei, Taiwan and the patented technology for 150mm GaN-on-Si substrates of Azzurro Semiconductors AG of ...
Tags: GaN-on-Si
Toshiba has announced plans to mass produce LEDs using gallium nitride-on-silicon (GaN-on-Si) technology in October 2012. The technology is a joint product of Toshiba and Bridgelux. The market believes the 8-inch GaN-on-Si substrates for ...
Tags: GaN-on-Si
20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN