LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Cree and Delta Energy Systems claim a breakthrough in power density, efficiency and weight of photovoltaic (PV) inverter design. The latest Delta solar inverters use SiC power mosfets from Cree. “The SiC mosfets from Cree were ...
Tags: Cree Sic, Delta Energy
Delta Energy Systems, a subsidiary of Delta Electronics Group (one of the world's largest providers of power management solutions), has launched a new generation of solar photovoltaic (PV) power inverters that use silicon carbide (SiC) ...
Tags: Electronics Group, Electrical
Cree’s latest SiC 1200V mosfets have been designed and fabricated to offer lower cost than previous generation mosfets. The product range has been extended to include a much larger 25mOhm die aimed at the higher power module market ...
Tags: Cree, SiC Mosfets, Consumer Electronics
Cree, Inc. announces the release of its second-generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200-V MOSFETs deliver industry-leading power density ...
Tags: SiC MOSFET, silicon-based solutions, silicon
Cree Inc of Durham, NC, USA has released its second generation SiC MOSFET. According to the firm, the new 1200V MOSFETs deliver leading power density and switching efficiency at half the cost per amp of Cree’s previous generation ...
Tags: Cree, SiC MOSFET, solar circuits
Cree, Inc. announces the release of its second generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver power density and switching ...
Tags: Cree, Volume Production, power applications
In hall A5, booth 343 at electronica 2012 in Munich, Germany (13–16 November), Cree Inc of Durham, NC, USA is announcing the commercially availability of what it claims is the industry’s first fully qualified, production-ready ...
Tags: power module, silicon carbide, high-frequency module, power converters
5 June 2012 SiC drives material innovation for high-power electronics Due to its superior thermal and electrical properties, the wide-bandgap material silicon carbide (SiC) has emerged as a key enabling material that has the potential to ...
Tags: SiC material, MOSFET, performance criteria, Defense agencies