Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD
Taiwan’s National Chiao-Tung University has developed a titanium nitride/copper (TiN/Cu) gate structure for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) that shows improvements over a comparison ...
Tags: GaN HEMT, Electronics
Researchers from the universities of California Santa Barbara (UCSB) and of New Mexico (UNM) have demonstrated semipolar nitride semiconductor blue and green laser diodes (LDs) with part of the upper cladding replaced by indium tin oxide ...
Tags: Iii-Nitride Lasers, Electrical
ETH-Zurich has reported increased maximum oscillation frequency for its indium phosphide/gallium arsenide antimonide (InP/GaAsSb) double-heterostructure bipolar transistors (DHBTs) [Rickard L?vblom et al, IEEE Electron Device Letters, ...
Researchers in China and Turkey have been using varying-thickness gallium nitride (GaN) barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve hole distributions and thus to reduce efficiency droop effects ...
Tags: InGaN LEDs, Electrical, Electronics
Researchers in China have developed a silicon dioxide (SiO2) on aluminium oxide (Al2O3) passivation for nitride semiconductor light-emitting diodes (LEDs) that offers more than two orders of magnitude reduced current leakage under reverse ...
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
Researchers in Korea have used three-dimensional (3D) graphene foam as a transparent conductor for the p-contact of blue nitride semiconductor light-emitting diodes (LEDs) [Byung-Jae Kim et al, Appl. Phys. Lett., vol102, p161902, 2013]. The ...
Tags: Graphene foam, LEDs
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
Researchers in China have used strain engineering to improve the light output power of 530nm green light-emitting diodes (LEDs) by 28.9% at 150mA current injection [Hongjian Li et al, Appl. Phys. Express, vol6, p052102, 2013]. The research ...
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling £1m to two universities – University College London (UCL) and Bristol – to support the development of compound ...
Tags: Solar Cells, Silicon Substrates
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Gwangju Institute of Science and Technology and Samsung Electronics Co Ltd of South Korea have developed a zinc oxide (ZnO) nanorod (NR) process for improving light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) by up to ...
Tags: GaN, LEDs, Electronics
The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
In booth 1127 at OFC/NFOEC 2013 in Anaheim, CA, USA (19-21 March), OneChip Photonics Inc of Ottawa, Canada, which designs optical chips and transceivers based on monolithic photonic integrated circuits (PICs) fabricated in indium phosphide ...