Three University of California, Riverside researchers are part of team recently awarded a grant of almost $1.7m from the US National Science Foundation (NSF) to characterize, analyze and synthesize a new class of ultra-thin-film materials ...
Tags: Graphene, Electrical, Electronics
Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
University of California Santa Barbara (UCSB) and epiwafer foundry IQE Inc have developed 1.3μm-wavelength indium arsenide (InAs) quantum dot (QD) lasers grown on silicon (Si) with “record performance” [Alan Y. Liu et al, ...
Tags: Silicon, `Quantum Dot Lasers
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
, Nobel Laureate, professor and president of the St. Petersburg Academic University of the Russian Academy of Sciences, and Viacheslav M. Andreev, professor and head of the laboratory of the A.F. Ioffe Physico-Technical Institute in St. ...
Tags: Electrical, Electronics, solar cell
Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
The Optogan group of companies is a vertically integrated producer of High Brightness LEDs based in St. Petersburg, Russian Federation. The group is also active in Finland and Germany. Founded in 2004 by 3 graduates of Ioffe ...
Tags: Optogan, Lighting Brands, led, led chip, hb led
Researchers are aiming to develop a new class of materials with remarkable properties using one atom-thick substances such as graphene in a new collaborative project. The proposal, which will involve researchers from the Universities of ...
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has sold an MBE 412 system to a “leading expert company in IR imaging sensors materials for ...
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has sold two Compact 21 MBE systems to Vienna University of Technology for its material research ...
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals