Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
The power discrete and module market will grow by almost$9bn to$26.2bn in 2016,forecasts the 15th edition of an annual report from IMS Research,which this year includes more comparisons of wide-bandgap(silicon carbide and gallium ...
Tags: GaN, SiC, IMS Research, silicon, semiconductor
Power electronics device market to reach $20bn this year The total market for semiconductor devices (discretes, modules and ICs) dedicated to the power electronics industry will reach $20bn in 2012, according to the report 'Status of the ...
Tags: raw material, GaN SiC
Power semi market grows 9%to$18bn in 2011 despite challenges Following a spectacular recovery in 2010,the power semiconductor discrete and module market grew by a more modest 9%in 2011 to just under$18bn,according to the 15th edition of ...
Tags: semiconductor, power modules, manufacturers
4 June 2012 Cascade launches first fully automatic high-power device measurement probe system Cascade Microtech Inc of Beaverton,OR,USA,which provides equipment for the precision contact,electrical measurement and test of ICs,optical ...
Tags: Cascade Microtech Inc.
In Hall 12,booth 404 at the PCIM Europe 2012 trade show in Nuremberg,Germany(8-10 May),power semiconductor manufacturer Infineon Technologies has launched its new CoolSiC 1200V silicon carbide(SiC)JFET family which,the firm says,takes ...
Tags: Infineon, SiC JFETs, Solar inverters, CoolSiC technology
5 June 2012 SiC drives material innovation for high-power electronics Due to its superior thermal and electrical properties, the wide-bandgap material silicon carbide (SiC) has emerged as a key enabling material that has the potential to ...
Tags: SiC material, MOSFET, performance criteria, Defense agencies