Researchers based in the USA have used a double-heterostructuring based on order-disorder properties of aluminium indium phosphide (AlInP) to produce 'amber-green' light-emitting diodes (LEDs) [Theresa M. Christian et al, J. Appl. Phys., ...
Tags: LEDs, Electrical, Electronics
The US Naval Research Laboratory (NRL) in Washington DC has developed a method to grow epitaxial nitride semiconductors on graphene [Neeraj Nepal et al, Appl. Phys. Express, vol6, p061003, 2013]. The researchers hope that this could lead to ...
Tags: Graphene, Electrical, Electronics, hot-electron transistors
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...
Researchers in China have used strain engineering to improve the light output power of 530nm green light-emitting diodes (LEDs) by 28.9% at 150mA current injection [Hongjian Li et al, Appl. Phys. Express, vol6, p052102, 2013]. The research ...
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Is it time for high-brightness LED manufacturing to get serious about process control? If so, what lessons can be learned from traditional, silicon-based integrated circuit manufacturing? The answer to the first question can be ...
Tags: LED manufacturing, LED substrate, MOCVD
Two semiconductor materials companies, France-based Soitec and Japan’s Sumitomo Electric Industries, Ltd., have signed a licensing and technology-transfer agreement under which Sumitomo Electric will use Soitec’s proprietary ...
Tags: LED lighting, LED, lighting
Epistar,the Taiwan-based company that is ranked as one of the world's largest manufacturers of high-brightness LEDs,has become the latest major producer to hint at a transfer to a potentially much cheaper silicon platform. Currently the ...
Dynax Semiconductor Inc. of China has placed its first purchase order for an AIXTRON Close Coupled Showerhead (CCS) CRIUS MOCVD system aimed at production of nitride semiconductor electronic devices. It will be the first system in China ...
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals
Researchers from Japan and the USA have reported the first fabrication on hydride vapor phase epitaxy (HVPE) aluminium nitride (AlN) substrates of aluminium gallium nitride (AlGaN) light-emitting diodes (LEDs) that emit at the ...
Tags: DUV, LEDs, AlGaN, AlN substrates, HVPE, light-emitting diodes
Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors
Researchers in China have improved LED power output and droop behavior in nitride semiconductor light-emitting diodes (LEDs) by including an electron-emitting layer under the active region [Jianbao Zhang et al, Appl. Phys. Express, vol5, ...
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...