M/A-COM Technology Solutions Inc of Lowell, MA, USA, which makes semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications, has launched 5V RF low-noise amplifier suited for 50-2700MHz cable, ...
Tags: M/A-COM, Electrical, Electronics
Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched a gallium arsenide (GaAs) ...
Tags: Electrical, Electronics
Taiwan’s National Chiao-Tung University has developed a titanium nitride/copper (TiN/Cu) gate structure for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) that shows improvements over a comparison ...
Tags: GaN HEMT, Electronics
Peregrine Semiconductor Corp, of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-sapphire (SOS), has announced what it claims is the highest-performance, carrier-grade Wi-Fi switch ...
Tags: Peregrine SOS CMOS SOI RF switches, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2018 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2018 is a ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2016 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2016 is a ...
Tags: Electrical, Electronics
PNY Technologies has announced the launch of the new M26 power bank. This battery pack is developed to become a boon for someone who likes to use the smartphone to the fullest, without fearing about battery charge. Shaped like a small ...
Tags: Electrical, Electronics
Opto Diode Corp, a division in the Photonics Group of ITW, has launched the OD-669-850 high-power gallium aluminum arsenide (GaAlAs) infrared LED (IRLED) illuminator. Suitable for night-vision illumination tasks, it features ultra-high ...
Tags: Opto Diode, High Output IRLED
Opto Diode Corp of Newbury Park, CA, USA (a division in the Photonics Group of ITW) has launched the OD-669-850 high-power gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator. Suitable for night-vision ...
ETH-Zurich has reported increased maximum oscillation frequency for its indium phosphide/gallium arsenide antimonide (InP/GaAsSb) double-heterostructure bipolar transistors (DHBTs) [Rickard L?vblom et al, IEEE Electron Device Letters, ...
Researchers in China have developed a silicon dioxide (SiO2) on aluminium oxide (Al2O3) passivation for nitride semiconductor light-emitting diodes (LEDs) that offers more than two orders of magnitude reduced current leakage under reverse ...
Peking and Xidian universities have jointly developed a self-terminating gate recess etch that allows them to produce aluminium gallium nitride (AlGaN) normally-off metal-oxide-semiconductor field-effect transistors (MOSFETs) with positive ...
Tags: Electrical, gate recess etch
The UK's University of Manchester has used band engineering on indium phosphide (InP) to create indium gallium arsenide (InGaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) with reduced gate current leakage and high breakdown ...
Tags: Barriers
Fabless semiconductor firm RFaxis Inc of Irvine, CA, USA, which designs RF semiconductors and embedded antenna solutions for the wireless connectivity and cellular mobility markets, has begun mass production of its RFX240 high-power 2.4GHz ...
Tags: RFaxis CMOS, Electrical, Electronics
Monster Watts is shipping two new WiQiQi wireless chargers for the Samsung Galaxy S4, and soon the iPhone 5 too. Back in April, over 10,000 first generation WiQiQi wireless chargers for the Samsung Galaxy S4, S3, and Note 2 were sold on ...
Tags: Samsung, Galaxy S4, WiQiQi Wireless Chargers