Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors
Researchers at Hokkaido University and Japan Science and Technology Agency—PRESTO have reported surrounding-gate transistors (SGTs) using compound semiconductor core–multishell (CMS) nanowire (NW) channels on silicon that ...
Tags: Nanowire, transistors, PRESTO
University of Massachusetts Lowell, Universidad de Salamanca, and North Carolina State University have integrated aluminium oxide dielectric into III-V ballistic deflection transistors (BDTs) for the first time [Vikas Kaushal et al, IEEE ...
Tags: Aluminium Oxide, Ballistic Deflection, Improved Transconductance
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN
Sharp has added LED arrays with efficiency up to 99 lm/W,up to 1,550 lm(typical)output,and with CRI up to 82(typical). Part of the Mini Zenigata range and called GW5BxxxK05,luminous flux is between 1,150 and 1,550 lm(typical). The 15W ...
RWTH Aachen University and Aixtron SE in Germany have developed a new technique to create aluminium oxide insulated gates for nitride semiconductor transistors[Herwig Hahn et al,Semicond.Sci.Technol.,vol27,p062001,2012].The method consists ...
Tags: Plasma oxidation, RWTH Aachen University, Aixtron SE, GaN
SKF is using the results of a recent product test to highlight the dangers that aftermarket vehicle repair technicians could expose themselves to if they choose to use some low-cost wheel bearing hub unit products during the repair process. ...
Tags: Market View, bearing