AWR Corp of El Segundo,CA,USA,a supplier of electronic design automation(EDA)software for designing RF and high-frequency components and systems,has expanded its AWR Design Forum(ADF)2012 Asia Pacific tour to include two stops in ...
Tags: AWR, EDA, ADF, design forum
22 June 2012 Fujitsu develops first high-output,single-chip 10GHz transceiver using GaN HEMT At the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(17-21 June),Fujitsu Laboratories of Kawasaki,Japan presented what ...
Cree Inc of Durham,NC,USA has announced the qualification and production release of two new gallium nitride(GaN)processes:G40V4(a 0.25µm process with operating drain voltage up to 40V)and G50V3(a 0.4µm process with operating ...
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
AWR Corp of El Segundo,CA,USA,a supplier of electronic design automation(EDA)software for designing RF and high-frequency components and systems,has added Taiwan to the list of cities scheduled for the July tourof its AWR Design ...
Tags: AWR, EDA, Microwave, Electronics