At the SEMICON West trade show in San Francisco (9-11 July), Soitec of Bernin, France, which makes engineered substrates - including silicon-on-insulator (SOI) wafers and III-V epiwafers - as well as concentrating photovoltaic (CPV) solar ...
Tags: Electrical, Electronics
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has announced the commercial availability ...
Tags: Electrical, Kyma Technologies
The UK's University of Manchester has used band engineering on indium phosphide (InP) to create indium gallium arsenide (InGaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) with reduced gate current leakage and high breakdown ...
Tags: Barriers
Nvidia wants to accelerate mobile-device performance with underlying tools that enable CPUs and graphics processors to work in a coherent manner. The company released on Tuesday its CUDA 5.5 programming tools, which will for the first ...
Tags: Nvidia, Programming Tools, Mobile Device
Mesuro Ltd of Pencoed Technology Park, UK, a spin-off from Cardiff University’s Centre for High Frequency Engineering, has announced the capability for its RF measurement services to deliver whatever measurements are needed for ...
Tags: Non-Linear Devices, Mesuro
Intel and Etisalat Misr, one of the leading telecom operators in Egypt, have announced the launch of the Middle East's first smartphone with Intel Inside – the new Etisalat E-20 smartphone. The Etisalat E-20 smartphone is said to be ...
Tags: Intel, Smartphone, Computer Products
Recent progress in the engineering of plasmonic structures has enabled new kinds of nanometer-scale optoelectronic devices as well as high-resolution optical sensing. But until now, there has been a lack of tools for measuring ...
Tags: Electrical, Electronics
GT Advanced Technologies and Soitec , today announced a development agreement and a licensing agreement allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system to produce high-quality GaN epi layers on ...
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...
Tags: NMOSFETs, GaAs, GaAs transistor ALE
NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems, has launched a small-form-factor, ...
Yole Développement announced today its new report “UV LEDs: Technology & Application Trends” which presents UV LED new applications and associated market metrics for the period 2012-2020, and a deep analysis of UV LED ...
Tags: UV LEDs, lighting industry, UV curing
Due to UV curing, UV LEDs should become a $270m business by 2017, and could hit $300m if new applications boom, according to a report ‘UV LEDs: Technology & Application Trends’ from market research firm Yole Développement ...
OPEL Technologies Inc of Toronto, Ontario, Canada – which develops III-V semiconductor devices and processes through US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT – says that it has achieved Milestone 4 ...
Tags: OPEL, semiconductor devices, semiconductor
The higher growth rates and improved material properties made possible by the HVPE system are expected to significantly reduce process costs while boosting device performance compared with the traditional MOCVD process. Initial pre-payment ...
Tags: HVPE system, process costs, device performance, MOCVD process
HVPE system expected to lower the cost of LED production and accelerate adoption in commercial and residential lighting GT Advanced Technologies (NASDAQ: GTAT) and Soitec (NYSE Euronext: SOI), today announced a development agreement and a ...