OSRAM Opto Semiconductors GmbH of Regensburg, Germany, a wholly owned subsidiary of Osram GmbH, is the world's second largest manufacturer of optoelectronic semiconductors after LiteOn and followed third place by Cree Inc. One of the main ...
Tags: Osram Opto Semiconductors GmbH, led, Light-emitting diode manufacturers
After falling 10% last quarter, for fiscal third-quarter 2013 (to 28 December 2012) Advanced Photonix Inc of Ann Arbor, MI, USA (which designs and makes APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray ...
Tags: Advanced Photonix, Lighting, company news
For fiscal second-quarter 2013 (to end-September 2012), Advanced Photonix Inc of Ann Arbor, MI, USA (which designs and makes silicon, InP- and GaAs-based APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray ...
Tags: Advanced Photonix, sales, high speed optical receiver, network spending
17 September 2012 Arsenide nanowires on graphite and graphene Researchers at Norwegian University of Science and Technology(NTNU)have succeeded in growing gallium arsenide(GaAs)and indium arsenide(InAs)compound semiconductor crystal ...
Tags: GaAs Nanowires, Solar Cells LEDs, Graphitic Substrates, Graphene
IBM has demonstrated that it is commercially feasible to bake optical circuitry into silicon processors using existing fabrication techniques, which could set the stage for radically faster and lower-cost computer communications. Silicon ...
Tags: IBM, Nanophotonics, Optical circuitry, silicon processors
Advanced Photonix Inc of Ann Arbor, MI, USA (which designs and makes silicon, InP- and GaAs-based APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray terahertz instrumentation) has separated the roles of ...
Tags: Advanced Photonix Inc, USA, high technology
Picometrix LLC of Ann Arbor, MI, USA, a subsidiary of Advanced Photonix Inc (which designs and makes silicon, InP- and GaAs-based APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray terahertz ...
Tags: Photonix, PIN, FILTRODE photodetectors
For its fiscal first-quarter 2013 (ended 29 June 2012), Advanced Photonix Inc of Ann Arbor, MI, USA (which designs and makes silicon, InP- and GaAs-based APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray ...
AIXTRON SE today announced a new MOCVD system order from Finisar Corporation,USA,a market leader in high-speed optical data communications.The order is for one AIX 2800G4-TM automated reactor dedicated to the growth of indium phosphide ...
Tags: AIXTRON G4, Order, Finisar
Latest issue of Semiconductor Today now available For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month,subscribe to Semiconductor ...
Tags: Issue, Semiconductor, Lights
Finisar orders another Aixtron G4 MOCVD system for InP lasers and detectors Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that it has received a repeat order for an AIX 2800G4-TM automated metal-organic chemical ...
Palomar instrument goes exoplanet hunting 18 Jul 2012 Project 1640 combines four components to combat speckle and distortion in images of distant stars. Seeing the light:Project 1640 in action A system now commissioned at Palomar ...
Tags: instrument, exoplanet hunting, Project 1640, Hale Telescope
Advanced Photonix gets first industrial THz order 11 Jul 2012 Receives first orders from its value-added reseller,Thermo Fisher Scientific,for its'T-Gauge'industrial terahertz gauging system. Advanced Photonix develops diverse silicon ...
Tags: Advanced Photonix, T-Gauge, industrial terahertz, measurement systems
For fiscal 2012 (to end-March), Advanced Photonix Inc of Ann Arbor, MI, USA (which designs and makes silicon, InP- and GaAs-based APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray terahertz instrumentation) ...
Tags: Advanced Photonix, Photodetector, Net Sales, Market
Researchers in Nanjing,China have reported the first fabrication and characterization at high temperature of high-performance solar-blind photodetectors(PDs)based on an aluminium gallium nitride(AlGaN)absorption layer and planar ...
Tags: High-Temperature, PD, MSM, Solar