Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), says that customers have deployed more than 1 ...
Tags: PICs, integrated circuits
In booth #1531 at the Optical Fiber Communication conference & exposition/National Fiber Optic Engineers Conference (OFC/NFOEC 2014) in San Francisco, CA (11-13 March), GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog ...
Tags: coherent optical link design, live demonstration, VCSEL driver
Packet optical networking system maker Optelian of Ottawa, ON, Canada says that optoelectronics device foundry Compound Semiconductor Technologies (CST) of Hamilton, Scotland, UK will supply grown gallium arsenide (GaAs) wafers to its ...
Scientists at the US Naval Research Laboratory (NRL) have suggested a method that could significantly increase the efficiency of green-blue-ultraviolet LEDs based on GaInN/GaN, AlGaN/GaN and AlInN/GaN quantum wells. It is reckoned that ...
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
The faint background glow that exists throughout the Universe, called the Cosmic Microwave Background (CMB), is made of photons that have been scattering since the universe was just 400,000 years old. Now in a new paper, physicist Liang Dai ...
Tags: Consumer Electronics, Electronics
Until recently measuring a 27-dimensional quantum state would have been a time-consuming, multistage process using a technique called quantum tomography, which is similar to creating a 3D image from many 2D ones. Researchers at the ...
Tags: Consumer Electronics, Electronics
Quantum dot (QD) diode laser manufacturer Innolume GmbH of Dortmund, Germany has launched a diode laser product family designed for pulse operation. Dedicated to operate as a seed source in Yb- and Nd-doped fiber laser systems, the ...
Tags: Innolume, Quantum-dot, diode lasers, pulse operation
Gemini Planet Imager's first light image of Beta Pictoris b, a planet orbiting the star Beta Pictoris. The star, Beta Pictoris, is blocked in this image by a mask so its light doesn't interfere with the light of the planet. In addition to ...
Tags: Gemini Planet Imager, image faint planets, exoplanet camera
Researchers in China have developed a selective area epitaxy (SAE) approach to create nanopyramids of nitride semiconductor 'white' light-emitting diodes (LEDs) without using phosphors [Kui Wu et al, Appl. Phys. Lett., vol103, p241107, ...
Tags: Electrical, Electronics, LED