EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched two RF switches suitable for the Internet of Things (IoT) applications including the connected home. In addition to the ...
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...
Tags: Peregrine, GaN FET Driver
Japan's Rohm Semiconductor has announced the availability of a new 1700V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for industrial applications, including manufacturing equipment and ...
Tags: SiC, MOSFET, manufacturing equipment
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
At the International Symposium on 3D Power Electronics, Integration and Manufacturing Symposium in Raleigh, NC, USA (13-15 June), power management component supplier Sarda Technologies of Durham, NC, USA announced a collaboration to ...
STMicroelectronics of Geneva, Switzerland says that its silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) devices have enabled the ZapCharger Portable (claimed to be the world's smallest ...
Tags: transistor, Electric-Car Charger
At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...
Tags: GaN power devices, SiC
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAGe-102425-300, a 300W gallium ...
Tags: MACOM, semiconductors, photonic applications
In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...
Solmates of Science Park Twente in Enschede, The Netherlands (a spin-off from the MESA+ Institute of Nanotechnology) has received an order for one of its pulsed laser deposition (PLD) equipment systems from nanoelectronics research center ...