US-based multi-color packaging converter, Hammer Packaging has finished a million dollar building expansion at its corporate headquarters in West Henrietta, NY, US. According to the company, the project has added 13,000ft2 to the existing ...
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
As finish foils production capacity continues to rise, companies are increasingly exploring making investments in varnishing plants using electron beam curing (EBC) technology. The first projects have already been wrapped up, with ...
Researchers in the USA have achieved record transconductance and cut-off frequencies for indium gallium arsenide (InGaAs) channel metal-oxide field effect transistors (MOSFETs) [D.-H. Kim et al, Appl. Phys. Lett., vol101, p223507, 2012]. ...
RadTech,a non-profit organization committed to the advancement of ultraviolet and electron beam technology,will present a special educational session for converting industry professionals at ICE USA 2013,taking place April 9-11 in ...
Tags: RadTech, ICE USA, ultraviolet and electron beam technology
Back in 1960 Electronics Weekly was born into a ferment of III-V semiconductor research that within two years would produce the first practical LED. In 1960 Dr Nick Holonyak of General Electric was developing an unusual material,GaAsP,as ...
Tags: General Electric, LED history, USA
Featuring a presentation by Boeing, and Innovations in Corrosion and Weathering for Industrial Finishing, Composites, and Advanced Materials and Processes for Industrial Applications, RadTech--The Association for Ultraviolet and Electron ...
Tags: Boeing, coil coating, coating, UV/EB Technology, ink, adhesive
Temescal of Livermore, CA, USA (a division of Ferrotec Corp) says it has made a major process breakthrough in electron-beam metallization for lift-off compound semiconductor applications. The Auratus deposition process enhancement ...
Tags: Temescal Electron-beam metalization, lift-off compound, semiconductor
Packaging firms are increasingly adopting the Fraunhofer Institute for Electron Beam and Plasma Technology FEP that was developed jointly by Fraunhofer FEP and Biofilm. The project partners included Applied Materials, hallow cathode ...
Tags: packaging firms, FEP, applied materials
Global specialty chemicals company Eastman has added the new polyethylene terephthalate (PET) polymer, Aspira One to its portfolio of resins, which can be used for beverage packaging applications. Molded for electron beam melting (EBM) ...
Second pillar of pan-European Extreme Light Infrastructure project to receive€180 M in structural funds. ELI:the first pillar The European Commission(EC)has approved€180 million in structural funding to support the ...
University of Glasgow and UniversitéParis researchers have demonstrated for the first time RF performance of 50nm gate-length diamond field-effect transistors(FETs)[Stephen A.O.Russell et al,IEEE Electron Device Letters,published ...
Tags: Diamond, Element Six, Electrical